We demonstrate room temperature pulsed operation of nitride based multi-quantum-well (MQW) laser diodes with cleaved mirror facets grown on a conventional C-face sapphire substrate. Cleavage was performed along the <11*BAR*2*BAR*0> direction of the sapphire substrate, and the resultant facet was analyzed using an atomic force microscope (AFM) and theoretical calculation. A single peak emisson, at a wavelength of 417.5 nm, with a full width at half-maximum of 0.15 nm, was obtained. The threshold current density of the laser was 50 kA/cm2 and a voltage for the threshold current was 20 V.
Amorphous GeSe2 films with Ag overlayers have been illuminated in situ in a Rutherford backscattering chamber and the evolution of the silver depth profile as a function of illumination time has been studied. The silver distribution in the doped region is found to be steplike as had earlier been seen in the system Ag/As2S3 and the composition of the photodoped product is approximately Ag1.1GexSe3−x. During the course of the reaction the silver/glass interface develops irregularities possibly due to the formation of silver islands.
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