We present in this report an InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) with record noise temperature at very low DC power dissipation. By minimizing parasitic contact and sheet resistances, and the gate current, a 130 nm gate length InP HEMT was optimized for cryogenic low noise operation. When integrated in a 4-8 GHz three-stage hybrid low noise amplifier operating at 10 K, a noise temperature of 1.2 K ± 1.3 K at 5.2 GHz was measured. The gain of the amplifier across the entire band was 44 dB, consuming only 4.2 mW of DC power. The extracted minimum noise temperature of the InP HEMT was 1 K at 6 GHz.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.