We report on voltage impulse induced reversible bistable magnetization switching in FeGaB/lead zirconate titanate (PZT) multiferroic heterostructures at room temperature. This was realized through strain-mediated magnetoelectric coupling between ferroelectric PZT and ferromagnetic FeGaB layer. Two reversible and stable voltage-impulse induced mechanical strain states were obtained in the PZT by applying an electric field impulse with its amplitude smaller than the electric coercive field, which led to reversible voltage impulse induced bistable magnetization switching. These voltage impulse induced bistable magnetization switching in multiferroic heterostructures provides a promising approach to power efficient bistable magnetization switching that is crucial for information storage.
Strong magnetoelectric coupling was observed at microwave frequencies in metallic magnetic film/lead zirconate titanate [Pb(Zr,Ti)O3] multiferroic composites, in which the magnetic films were either FeCoB or FeGaB with relatively high saturation magnetostriction constants between 40 and 70ppm and narrow ferromagnetic resonance linewidths of ∼20Oe at 10GHz. Large electrostatically induced ferromagnetic resonance frequency shifts of 50–110MHz at ∼2.3GHz were observed. These metallic magnetic film/Pb(Zr,Ti)O3 multiferroic composites with large electrostatic tunability of the ferromagnetic resonance frequency provide great opportunities for integrated microwave multiferroic devices.
Strong magnetoelectric (ME) interaction was demonstrated at both dc and microwave frequencies in a novel Zn0.1Fe2.9O4/PMN–PT (lead magnesium niobate–lead titanate) multiferroic heterostructure, which was prepared by spin-spray depositing a Zn0.1Fe2.9O4 film on a single-crystal PMN–PT substrate at a low temperature of 90 °C. A large electric-field induced ferromagnetic resonance field shift up to 140 Oe was observed, corresponding to an ME coefficient of 23 Oe cm kV−1. In addition, a large electrostatic field tuning of the magnetic hysteresis loops was observed with a large squareness ratio change of 18%. The spin-spray deposited ferrite/piezoelectric multiferroic heterostructures exhibiting strong ME interactions at both dc and microwave frequencies provide great opportunities for novel electrostatically tunable microwave magnetic devices synthesized at a low temperature.
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