InAs has been studied as the active material of metamorphic InAlAs∕InAs modulation-doped heterostructures grown on InP. We show that the main limitation of these structures is the plastic relaxation of the 10–15nm thick InAs channel compressively strained to the underlying InAlAs buffer. The best results are obtained with a composite channel made of 7nm InAs inserted in an InGaAs layer. In this case, the electron mobility reaches 21 500 and 179000cm2∕Vs at 300 and 77K, respectively, for a sheet carrier density of 9×1011cm−2. These values are among the highest ones ever reported for such metamorphic structures.
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