A simple electrical model for living cells predicts an increasing probability for electric field interactions with intracellular substructures of both prokaryotic and eukaryotic cells when the electric pulse duration is reduced into the sub-microsecond range. The validity of this hypothesis was verified experimentally by applying electrical pulses (durations 100 micros-60 ns, electric field intensities 3-150 kV/cm) to Jurkat cells suspended in physiologic buffer containing propidium iodide. Effects on Jurkat cells were assessed by means of temporally resolved fluorescence and light microscopy. For the longest applied pulses, immediate uptake of propidium iodide occurred consistent with electroporation as the cause of increased surface membrane permeability. For nanosecond pulses, more delayed propidium iodide uptake occurred with significantly later uptake of propidium iodide occurring after 60 ns pulses compared to 300 ns pulses. Cellular swelling occurred rapidly following 300 ns pulses, but was minimal following 60 ns pulses. These data indicate that submicrosecond pulses achieve temporally distinct effects on living cells compared to microsecond pulses. The longer pulses result in rapid permeability changes in the surface membrane that are relatively homogeneous across the cell population, consistent with electroporation, while shorter pulses cause surface membrane permeability changes that are temporally delayed and heterogeneous in their magnitude.

Both the origins of the high open circuit voltages (VOC) in amorphous silicon solar cells having p layers prepared with very high hydrogen dilution and the physical structure of these optimum p layers remain poorly understood topics, with several studies offering conflicting views. This work attempts to overcome the limitations of previous studies by combining insights available from electronic measurements, real time spectroscopic ellipsometry, atomic force microscopy, and both high-resolution transmission electron microscopy (TEM) and dark field TEM of cross sections of entire solar cells. It is found that solar cells fabricated with p layers having a low volume fraction of nanocrystals embedded in a protocrystalline Si:H matrix possess lower recombination at the i∕p interface than standard cells and deliver a higher VOC. The growth of the p layers follows a thickness evolution in which pure protocrystalline character is observed at the interface to the i layer. However, a low density of nanocrystallites nucleates with increasing thickness. The advantages offered by the protocrystalline character associated with the amorphous phase of the mixed-phase (amorphous+nanocrystalline) p layers prepared with excess H2 dilution account for the improved VOC of the optimum p layers. In this model, the appearance of a low volume fraction of nanocrystals near the top transparent conductor interface is proposed to be incidental to the high VOC.

The effects of microstructure on the gap states of hydrogen diluted and undiluted hydrogenated amorphous silicon (a-Si:H) thin film materials and their solar cells have been investigated. In characterizing the films the commonly used methodology of relating just the magnitudes of photocurrents and subgap absorption, α(E), was expanded to take into account states other than those due to dangling bond defects. The electron mobility-lifetime products were characterized as a function of carrier generation rates and analysis was carried out of the entire α(E) spectra and their evolution with light induced degradation. Two distinctly different defect states at 1.0 and 1.2 eV from the conduction band and their contributions to carrier recombination were identified and their respective evolution under 1 sun illumination characterized. Direct correlations were obtained between the recombination in thin films with that of corresponding solar cells. The effects of the difference in microstructure on the changes in these two gap states in films and solar cells were also identified It is found that improved stability of protocrystalline Si:H can in part be attributed to the reduction of the 1.2 eV defects. It is also shown that ignoring the presence of multiple defects leads to erroneous conclusions being drawn about the stability of a-Si:H and SWE.

A careful study has been carried out on dark forward bias current-voltage characteristics in high-quality well-controlled a-Si:H solar cell structures. Contributions of potential barriers in the intrinsic layers adjacent to the p and n contacts on carrier injection have been clearly identified and carrier recombination in the p∕i regions systematically controlled and clearly separated from that in the bulk of the intrinsic layers. It is found that the recombination in the p∕i regions results in voltage-independent diode quality factor, n, with values very close to 1 whereas recombination in the bulk results in bias-dependent differential diode quality factors, n(V). These n(V) characteristics are consistent with Shockley-Read-Hall recombination through a continuous distribution of gap states in the intrinsic layers which have spatially uniform distributions of gap states and electric field. Based on an analytical model the n(V) characteristics are interpreted in terms of Gaussian-like energy distributions of gap states in both undiluted and diluted protocrystalline a-Si:H intrinsic layers. Gaussian-like distributions are identified centered around as well as ∼0.3eV away from midgap with differences in their distributions for the two materials in the annealed states and their evolution upon introducing light-induced defects. These results demonstrate that forward bias dark currents and, in particular, n(V) characteristics offer a reliable probe for characterizing the gap states of the native- and light-induced defect states in a-Si:H solar cells as well as mechanisms limiting their performance.

In order to obtain more insight into the nature of the recovery in the light induced changes at room temperature in hydrogenated amorphous silicon (a-Si:H) solar cells the relaxation of the photocurrents in-the light induced changes in protocrystalline a-Si:H thin films were investigated. Immediately upon the removal of I sun illumination recoveries in the photocurrents are found like those present in the currents in the dark current-voltage characteristics in corresponding p-i-n solar cells. The striking similarity between the results on thin films and the corresponding dark foiward bias current-voltage characteristics of solar cells suggest that the recoveries obtained with low generation rates (5~1O~~cm"s~') in the films are a measure of annealing kinetics of the defect states around midgap in the bulk of the films. The mtes of recoveries decrease with higher camer generation rates and the length of the light induced degradation. Results are presented which indicate that the history of creation and annealing of light induced defect states is important in determining subsequent creation and annealing kinetics.