We present a novel, graphene-based device concept for high-frequency
operation: a hot electron graphene base transistor (GBT). Simulations show that
GBTs have high current on/off ratios and high current gain. Simulations and
small-signal models indicate that it potentially allows THz operation. Based on
energy band considerations we propose a specific materials solution that is
compatible with SiGe process lines.Comment: 9 pages, 3 figures; IEEE Electron Device Letters, Vol.33, Issue 5,
(2012
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.