Crystalline 2D boron sheets, known as borophene, are the most recently-discovered type of 2D materials, and very little is known about them. Different configurations of borophene have been reported stable when grown on Ag(1 1 1) surface under well controlled conditions. One of this configurations is partially oxidized while the other one remains quite inert to oxidation when exposed to ambient conditions. In this work, the oxidation process of the free-standing and Ag(1 1 1)-supported borophene is modeled using first-principles calculations based on density functional theory (DFT). On the free-standing case, the oxygen molecule may go through a triplet to singlet transition, followed by a barrierless oxidation process. This transition is not observed upon the presence of the Ag(1 1 1) surface, what accelerates the oxidation process. We also propose that the different structures of borophene reported in the literature can be understood by this oxidation process. Oxidation of the buckled structure could induce the planar structure with an ordered distribution of vacancies.

Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a 1 arXiv:1902.04514v1 [cond-mat.mtrl-sci] 12 Feb 2019 dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, we establish the existence of two sub-lattices defined by metal-oxygen-silicon bridges involving inequivalent substrate sites. We further discover four electronic bands below Fermi level, at high binding energies, two of them forming a Dirac cone at K point, and two others forming semiflat bands. While the latter two correspond to hybridized states between the oxide and the metal, the former relate to the topmost silicon-oxygen plane, which is not directly coupled to the substrate. Our analysis is based on high resolution X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and density functional theory calculations.Keywords ultrathin silicon oxide film, monolayer, photoemission spectroscopy, density functional theory calculations, metal-oxide interface Recently, metal-supported crystalline silicon oxide films have been grown as thin as mono-

FeGa 3 is an unusual intermetallic semiconductor that presents intriguing magnetic responses to the tuning of its electronic properties. When doped with Ge, the system evolves from diamagnetic to paramagnetic to ferromagnetic ground states that are not well understood. In this work, we have performed a joint theoretical and experimental study of FeGa 3−x Ge x using Density Functional Theory and magnetic susceptibility measurements. For low Ge concentrations we observe the formation of localized moments on some Fe atoms and, as the dopant concentration increases, a more delocalized magnetic behavior emerges. The magnetic configuration strongly depends on the dopant distribution, leading even to the appearance of antiferromagnetic interactions in certain configurations.

We perform an ab initio study of the electronic structure and magnetic properties of 3d, 4d and 5d transition metals (TM) adsorbed on freestanding and Ag(1 1 1)-supported [Formula: see text]-borophene. The stability of TM adsorption is high for all atoms and increases with the period. For the 3d TM adsorption we observed strong exchange effects. The Ag(1 1 1)-surface induced small effects on the calculated properties. Studying the magnetic interaction between TMs, VIB atoms showed direct exchange, while VIIB and Fe showed 2p(B)-mediated indirect exchange. In the ultimate case of a one-dimensional TM array, Ru and Os also show direct exchange effects.

IrGa is an intermetallic compound which is expected to be a metal, but a study on the electronic properties of this material to confirm its metallic character is not available in the literature. In this work, we report for the first time a first-principles density functional theory and semiclassical Boltzmann theory study of the structural, electronic and transport properties of this material. The inclusion of the spin-orbit coupling term is crucial to calculate accurately the electronic properties of this compound. We have established that IrGa is an indirect semiconductor with a narrow gap of 0.07 eV. From semiclassical Boltzmann transport theory, it is inferred that this material, with the appropriate hole concentration, could have a thermoelectric figure of merit at room temperature comparable to other intermetallic compounds such as FeGa, though the transport properties of IrGa are highly anisotropic.