To deposit an ultrathin dielectric onto WSe2, monolayer titanyl phthalocyanine (TiOPc) is deposited by molecular beam epitaxy as a seed layer for atomic layer deposition (ALD) of Al2O3 on WSe2. TiOPc molecules are arranged in a flat monolayer with 4-fold symmetry as measured by scanning tunneling microscopy. ALD pulses of trimethyl aluminum and H2O nucleate on the TiOPc, resulting in a uniform deposition of Al2O3, as confirmed by atomic force microscopy and cross-sectional transmission electron microscopy. The field-effect transistors (FETs) formed using this process have a leakage current of 0.046 pA/μm(2) at 1 V gate bias with 3.0 nm equivalent oxide thickness, which is a lower leakage current than prior reports. The n-branch of the FET yielded a subthreshold swing of 80 mV/decade.

Several proposed beyond-CMOS devices based on two-dimensional (2D) heterostructures require the deposition of thin dielectrics between 2D layers. However, the direct deposition of dielectrics on 2D materials is challenging due to their inert surface chemistry. To deposit high-quality, thin dielectrics on 2D materials, a flat lying titanyl phthalocyanine (TiOPc) monolayer, deposited via the molecular beam epitaxy, was employed to create a seed layer for atomic layer deposition (ALD) on 2D materials, and the initial stage of growth was probed using in situ STM. ALD pulses of trimethyl aluminum (TMA) and H2O resulted in the uniform deposition of AlOx on the TiOPc/HOPG. The uniformity of the dielectric is consistent with DFT calculations showing multiple reaction sites are available on the TiOPc molecule for reaction with TMA. Capacitors prepared with 50 cycles of AlOx on TiOPc/graphene display a capacitance greater than 1000 nF/cm(2), and dual-gated devices have current densities of 10(-7)A/cm(2) with 40 cycles.

The generation of charged nanoparticles in the gas phase has frequently been reported during the synthesis of thin films and nanostructures, such as nanowires, using chemical vapor deposition (CVD). In an effort to confirm whether charged silicon nanoparticles were also generated during the synthesis of Si nanowires by CVD, a differential mobility analyzer (DMA) combined with a Faraday cup electrometer (FCE) was connected to an atmospheric-pressure CVD reactor under typical conditions for Si nanowire growth. DMA measurements showed that both positively and negatively charged nanoparticles were abundantly generated in the gas phase during CVD. The process parameters such as reactor temperature, molar ratio of SiCl 4 /H 2 , and hydrogen flow rate affected not only the growth behavior of the Si nanowires but also the size distribution of both positively and negatively charged nanoparticles.

15-Crown-5-ether-substituted cobalt(II) phthalocyanine (CoCrPc) is an atomically thin and flat-laying, electrically insulating molecule that can solvate ions; these properties are desirable for nanoelectronic devices. A simple, solution-phase deposition method is demonstrated to produce a monolayer of CoCrPc on highly ordered pyrolytic graphite (HOPG). A uniform and continuous CoCrPc layer is obtained on freshly cleaved HOPG by solution drop casting, followed by thermal annealing under ambient pressure in Ar in the temperature range of 150−210 °C. While the quality of the monolayer is independent of annealing time, the composition of the annealing atmosphere is critical; exposure to ambient air degrades the quality of the monolayer over the time scale of minutes. Using ultrahigh vacuum scanning tunneling microscopy, a highly ordered and flat CoCrPc layer with hexagonal symmetry and average spacing of 4.09 ± 0.2 nm is observed. The band gap of the CoCrPc, measured by scanning tunneling spectroscopy, is 1.34 ± 0.07 eV. The ability to prepare uniform, ordered, and conformal monolayers of CoCrPc molecules on HOPG represents the first step toward using these materials to seed dielectric growth on 2D crystals and provide a 2D electrolyte for the electrostatic gating of semiconductors at the ultimate limit of scaling.