Back channel etched (BCE) structure TFTs have been developed for larger LCD TVs with higher resolution. We developed 5 mask 85 inch 8K4K AMLCDs, and now are focusing on the 4 mask process. For high resolution OLED TVs, self‐aligned coplanar structure TFTs have been developed to reduce the parasitic capacitance. We have been developing low resistive Cu‐based self‐aligned coplanar TFT for 4K2K top emission (T/E) ink jet printing (IJP) AMOLEDs.
Methods for lessening the AS tail and N + tail were systematically investigated in G8.5 glass for LCD product development including novel structure designs and matched 4-Mask process. While matched 4-Mask process had success in tails reducing, I on keeping, stability improving and I off decreasing at higher negative voltage by optimized O 2 ashing process, further efforts were still indispensable. Novel mask structure designs were provided using photoresist thickness modulation method for 4-Mask process architecture to ulteriorly reduce the tails. Less amorphous silicon tail (AS tail) and heavy doped amorphous silicon tail (N + tail) were attained in both inner and outline frame beside the second metal solely by structure design, which limited the scope of N + tail within 0.5 um and AS tail about 1.2um, respectively. What's more, the N + tail could be further decreased by cooperating with the matched 4-Mask process using the optimized recipe.
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