High‐quality hole transport layers are prepared by spin‐coating copper doped nickel oxide (Cu:NiO) nanoparticle inks at room temperature without further processing. In agreement with theoretical calculations predicting that Cu doping results in acceptor energy levels closer to the valence band maximum compared to gap states of nickel vacancies in undoped NiO, an increase in the conductivity in Cu:NiO films compared to NiO is observed. Cu in Cu:NiO can be found in both Cu+ and Cu2+ states, and the substitution of Ni2+ with Cu+ contributes to both increased carrier concentration and carrier mobility. In addition, the films exhibit increased work function, which together with the conductivity increase, enables improved charge transfer and extraction. Furthermore, recombination losses due to lower monomolecular Shockley‐Read‐Hall recombination are reduced. These factors result in an improvement of all photovoltaic performance parameters and consequently an increased efficiency of the inverted planar perovskite solar cells. A power conversion efficiency (PCE) exceeding 20% could be achieved for small‐area devices, while PCE values of 17.41 and 18.07% are obtained for flexible devices and large area (1 cm2) devices on rigid substrates, respectively.

We examined different encapsulation strategies for perovskite solar cells by testing the device stability under continuous illumination, elevated temperature (85 °C) and ambient humidity of 65 %. The effects of the use of different epoxies, protective layers and the presence of desiccant were investigated. The best stability (retention of ∼80 % of initial efficiency on average after 48 h) was obtained for devices protected by a SiO film and encapsulated with a UV-curable epoxy including a desiccant sheet. However, the stability of ZnO-based cells encapsulated by the same method was found to be inferior to that of TiO -based cells. Finally, outdoor performance tests were performed for TiO -based cells (30-90 % ambient humidity). All the stability tests were performed following the established international summit on organic photovoltaic stability (ISOS) protocols for organic solar cell testing (ISOS-L2 and ISOS-O1).

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Ruddlesden–Popper halide perovskite (RPP) materials are of significant interest for light‐emitting devices since their emission wavelength can be controlled by tuning the number of layers n, resulting in improved spectral stability compared to mixed halide devices. However, RPP films typically contain phases with different n, and the low n phases tend to be unstable upon exposure to humidity, irradiation, and/or elevated temperature which hinders the achievement of pure blue emission from n = 2 films. In this work, two spacer cations are used to form an RPP film with mixed cation bilayer and high n = 2 phase purity, improved stability, and brighter light emission compared to a single spacer cation RPP. The stabilization of n = 2 phase is attributed to favorable formation energy, reduced strain, and reduced electron–phonon coupling compared to the RPP films with only one type of spacer cation. Using this approach, pure blue light‐emitting diodes (LEDs) with Commission Internationale de l'éclairage (CIE) coordinates of (0.156, 0.088) and excellent spectral stability are achieved.

Formamidinium (FA)‐based perovskites exhibit great potential for photovoltaics since they enable the achievement of power conversion efficiency (PCE) over 22%. The bandgap of FA‐based perovskite is lower than that of the methylammonium‐based one, while the larger ionic radius and dual‐ammonia group of FA ions restrain their movement in close‐packing [PbI6]4− cages, leading to improved stability. Here, the structure and properties of FAPbI3− and FA‐based mixed cation perovkites are discussed. In particular, the issues of polymorphism and stabilization of the desired low‐bandgap crystal phase of FAPbI3 are considered. FAPbI3 exhibits polymorphisms with a photovoltaically unfavorable δ‐phase that is stable at room temperature, and, thus, it is difficult to prepare continuous and compact FAPbI3 with the desired crystal structure, namely, the pure α‐phase. Hence, overcoming the limitations of phase transitions is the critical issue in obtaining high‐quality FA‐based perovskite films, which are a prerequisite for solar cells with high PCEs. Here, the focus is on the fabrication methods of FA‐based perovskite films, namely, additive engineering, intermolecular exchange, interfacial engineering, and chemical vapor deposition. A comprehensive overview of the fabrication methodology for the FA‐based perovskite films is provided to facilitate understanding of the underlying mechanisms.