Caspr/paranodin, a neuronal transmembrane glycoprotein, is essential for the structure and function of septate-like paranodal axoglial junctions at nodes of Ranvier. A closely related protein, Caspr2, is concentrated in juxtaparanodal regions where it associates indirectly with the shaker-type potassium channels. Although ultrastructural studies indicate that paranodal complexes are linked to the cytoskeleton, the intracellular partners of Caspr/paranodin, as well as those of Caspr2, are poorly characterized. We show that the conserved intracellular juxtamembrane regions (GNP motif) of Caspr/paranodin and Caspr2 bind proteins 4.1R and 4.1B. 4.1B is known to be enriched in paranodal and juxtaparanodal regions. 4.1B immunoreactivity accumulates progressively at paranodes and juxtaparanodes during postnatal development, following the concentration of Caspr/paranodin and Caspr2, respectively, in central and peripheral myelinated axons. These two proteins coimmunoprecipitated with 4.1B in brain homogenates. Our results provide strong evidence for the association of 4.1B with Caspr/paranodin at paranodes and with Caspr2 at juxtaparanodes. We propose that 4.1B anchors these axonal proteins to the actin-based cytoskeleton in these two regions.
Ferroelectrics sometimes show large electro-optical and non-linear optical effects, available for polarization rotation and frequency conversion of light, respectively. If the amplitude of ferroelectric polarization is modulated in the picosecond time domain, terahertz repetition of optical switching via electro-optical and non-linear optical effects would be achieved. Here we show that polarization amplitude can be rapidly modulated by a terahertz electric field in an organic ferroelectric, tetrathiafulvalene-p-chloranil (TTF-CA). In this compound, alternately stacked donor (TTF) and acceptor (CA) molecules are dimerized via the spin-Peierls mechanism, and charge transfer within each dimer results in a new type of ferroelectricity called electronic-type ferroelectricity. Using a terahertz field, the intradimer charge transfer is strongly modulated, producing a subpicosecond change in the macroscopic polarization, which is demonstrated by transient reflectivity and second-harmonic generation measurements. Subsequently, coherent oscillation of the dimeric molecular displacements occur, which is explained by the modulation of the spin moment of each molecule.
The transition of a Mott insulator to metal, the Mott transition, can occur via carrier doping by elemental substitution, and by photoirradiation, as observed in transition-metal compounds and in organic materials. Here, we show that the application of a strong electric field can induce a Mott transition by a new pathway, namely through impulsive dielectric breakdown. Irradiation of a terahertz electric-field pulse on an ET-based compound, κ-(ET) Cu[N(CN)]Br (ET:bis(ethylenedithio)tetrathiafulvalene), collapses the original Mott gap of ∼30 meV with a ∼0.1 ps time constant after doublon-holon pair productions by quantum tunnelling processes, as indicated by the nonlinear increase of Drude-like low-energy spectral weights. Additionally, we demonstrate metallization using this method is faster than that by a femtosecond laser-pulse irradiation and that the transition dynamics are more electronic and coherent. Thus, strong terahertz-pulse irradiation is an effective approach to achieve a purely electronic Mott transition, enhancing the understanding of its quantum nature.
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