Articles you may be interested inImproved gate oxide integrity of strained Si n -channel metal oxide silicon field effect transistors using thin virtual substrates Atomic-layer-deposited silicon-nitride/SiO 2 stacked gate dielectrics for highly reliable pmetal-oxide-semiconductor field-effect transistorsWe have studied the effects of the gate hard mask and the gate spacer nitride film on the reliability of W/WN x / poly-Si gated devices. When the gate hard mask nitride film is used, severe degradation of the stress-induced leakage current ͑SILC͒ and the interface trap density ͑D it ͒ characteristics are observed in the large metal-oxide-semiconductor ͑MOS͒ capacitors. On the other hand, as the devices become smaller, the effects of the hard mask nitride film are relieved. The gate spacer stack plays a more critical role in the reliability of smaller devices. The oxide/nitride ͑ON͒ spacered devices exhibit better reliability in terms of SILC, D it , threshold voltage ͑V th ͒ shift, and transconductance ͑G m ͒ compared to those of the nitride/oxide/nitride ͑NON͒ spacered ones. These behaviors are explained by the mechanical stress of the nitride films.
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