RTS (random telegraph signal)-like fluctuation in GateInduced Drain Leakage (GIDL) current of Saddle-Fin (S-Fin) type DRAM cell transistor was investigated for the first time. Furthermore, two types of fluctuation which have apparently different τ high (average time duration of high leakage state) to τ low (average time duration of low leakage state) ratio were investigated, and it was found that the energy difference between bistable levels is similar to that of the junction leakage.
We generated traps inside gate oxide in gate-drain overlap region of recess channel type dynamic random access memory (DRAM) cell transistor through Fowler-Nordheim (FN) stress, and observed gate induced drain leakage (GIDL) current both in time domain and in frequency domain. It was found that the trap inside gate oxide could generate random telegraph signal (RTS)-like fluctuation in GIDL current. The characteristics of that fluctuation were similar to those of RTS-like fluctuation in GIDL current observed in the non-stressed device. This result shows the possibility that the trap causing variable retention time (VRT) in DRAM data retention time can be located inside gate oxide like channel RTS of metal-oxidesemiconductor field-effect transistors (MOSFETs). #
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