Graphene with exceptional properties has attracted significant attention in many fields. Chemical vapor deposition has been a vital method for synthesizing high-quality graphene with controlled size, thickness, and quality. Intrinsic graphene is a zero bandgap 2D material with weak
ambipolar behavior, and the transistors based on such graphene show a low on/off current ratio. It is important to achieve the controllable preparation of graphene with adjustable electrical properties. Doping the graphene with heteroatoms is a standard method to achieve this goal. Here, we
demonstrate that high-quality N-doped graphene can be prepared using soybeans as the carbon source. We can control the preparation of high-quality N-doped graphene on Cu catalyst using soybean as the carbon source, including, N-doped single-crystal graphene domains and N-doped monolayer films.
Electrical measurements show that the N-doped graphene exhibits an n-type behavior, indicating that doping can effectively modulate graphene’s electrical properties. Based on the high-quality N-doped graphene, we demonstrate its applications in flexible supercapacitors and skin-like
electrophysiological monitors, showing high application value in wearable electronic devices.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.