The hallmark of the spin-Hall insulator is the presence of gapless edge states of different spins moving in opposite directions. Through analytical solutions in a model calculation for a strip of finite width, we find that edge states on the two sides can couple together to produce a gap in the spectrum, destroying the quantum spin-Hall effect. The application of a magnetic field can however modify and even remove the gap by shifting the momenta of the edge states relative to each other.

Weyl semimetals provide the realization of Weyl fermions in solid-state physics. Among all the physical phenomena that are enabled by Weyl semimetals, the chiral anomaly is the most unusual one. Here, we report signatures of the chiral anomaly in the magneto-transport measurements on the first Weyl semimetal TaAs. We show negative magnetoresistance under parallel electric and magnetic fields, that is, unlike most metals whose resistivity increases under an external magnetic field, we observe that our high mobility TaAs samples become more conductive as a magnetic field is applied along the direction of the current for certain ranges of the field strength. We present systematically detailed data and careful analyses, which allow us to exclude other possible origins of the observed negative magnetoresistance. Our transport data, corroborated by photoemission measurements, first-principles calculations and theoretical analyses, collectively demonstrate signatures of the Weyl fermion chiral anomaly in the magneto-transport of TaAs.

2The electrical Hall effect is the production of a transverse voltage under an out-of-plane magnetic field [1]. Historically, studies of the Hall effect have led to major breakthroughs including the discoveries of Berry curvature and the topological Chern invariants [2, 3]. In magnets, the internal magnetization allows Hall conductivity in the absence of external magnetic field [3]. This anomalous Hall effect (AHE) has become an important tool to study quantum magnets [3][4][5][6][7][8]. In nonmagnetic materials without external magnetic fields, the electrical Hall effect is rarely explored because of the constraint by time-reversal symmetry.However, strictly speaking, only the Hall effect in the linear response regime, i.e., the Hall voltage linearly proportional to the external electric field, identically vanishes due to time-reversal symmetry [9]. The Hall effect in the nonlinear response regime, on the other hand, may not be subject to such symmetry constraints [10][11][12]. Here, we report the observation of the nonlinear Hall effect (NLHE) [12] in the electrical transport of the nonmagnetic 2D quantum material, bilayer WTe 2 . Specifically, flowing an electrical current in bilayer WTe 2 leads to a nonlinear Hall voltage in the absence of magnetic field. The NLHE exhibits unusual properties sharply distinct from the AHE in metals: The NLHE shows a quadratic I -V characteristic; It strongly dominates the nonlinear longitudinal response, leading to a Hall angle of ∼ 90 • . We further show that the NLHE directly measures the "dipole moment" [12] of the Berry curvature, which arises from layer-polarized Dirac fermions in bilayer WTe 2 . Our results demonstrate a new Hall effect and provide a powerful methodology to detect Berry curvature in a wide range of nonmagnetic quantum materials in an energy-resolved way.In 1879 Edwin H. Hall observed that, when an electrical current passes through a gold film under a magnetic field, a transverse voltage develops [1]. This effect, known as the Hall effect, forms the basis of both fundamental research and practical applications such as magnetic field measurements and motion detectors. In contrast to the classical Hall effect where the Lorentz force bends the trajectory of the charge carriers, quantum mechanics describes the "bending" by the intrinsic geometry of the quantum electron wavefunctions under time-reversal symmetry breaking. This crucial theoretical understanding eventually led to the seminal discoveries of the Berry curvature and the topological Chern number, which have become pillars of modern condensed matter physics [2, 3]. One important cur-3 rent frontier is to identify AHE with quantized or topological character in unconventional magnetic quantum materials, where spin-orbit coupling (SOC), geometrical frustration and electronic correlations coexist [3][4][5][6][7][8]. These extensive studies [1,[3][4][5][6][7][8] have established a paradigm for the electrical Hall effect: (1) A non-vanishing Hall conductivity arises from the momentum-integrated Berry curva...

We study transport and optical properties of the surface states which lie in the bulk energy gap of a thin-film topological insulator. When the film thickness is comparable with the surface state decay length into the bulk, the tunneling between the top and bottom surfaces opens an energy gap and form two degenerate massive Dirac hyperbolas. Spin dependent physics emerges in the surface bands which are vastly different from the bulk behavior. These include the surface spin Hall effects, spin dependent orbital magnetic moment, and spin dependent optical transition selection rule which allows optical spin injection. We show a topological quantum phase transition where the Chern number of the surface bands changes when varying the thickness of the thin film.

A magnetoconductivity formula is presented for the surface states of a magnetically doped topological insulator. It reveals a competing effect of weak localization and weak antilocalization in quantum transport when an energy gap is opened at the Dirac point by magnetic doping. It is found that, while random magnetic scattering always drives the system from the symplectic to the unitary class, the gap could induce a crossover from weak antilocalization to weak localization, tunable by the Fermi energy or the gap. This crossover presents a unique feature characterizing the surface states of a topological insulator with the gap opened at the Dirac point in the quantum diffusion regime.PACS numbers: 73.25.+i, 03.65.Vf, Topological surface states, composed of an odd number of massless Dirac cones, are peculiar to threedimensional (3D) topological insulators [1][2][3]. Electrons in these states have a helical spin structure in momentum space, and acquire a π Berry's phase after completing a closed trajectory adiabatically around the Fermi surface. The π Berry phase could lead to the absence of backscattering[4], weak antilocalization [5], and the absence of Anderson localization [6,7]. In the quantum diffusion regime (mean free path ≪ system size ∼ phase coherent length), an electron maintains its phase coherence after being scattered by static centers for many times. As a result, the destructive interference due to the π Berry phase can give a quantum enhancement to the classical electronic conductivity, leading to weak antilocalization (WAL) [8,9]. Applying a magnetic field tends to break the destructive interference, giving rise to negative magnetoconductivity (MC), a key signature of WAL. WAL is expected in systems with symplectic symmetry. Much effort has been devoted to observing WAL in graphene [5,[10][11][12][13]. However, graphene has two valleys of gapless Dirac cones with opposite chiralities, and the intervalley scattering will inevitably suppress WAL [5,[10][11][12][13]. In contrast, the surface states of recently discovered topological insulators Bi 2 Te 3 and Bi 2 Se 3 have only one helical Dirac cone [14][15][16], and WAL is intrinsic to them. Many observations of WAL in Bi 2 Te 3 and Bi 2 Se 3 have been reported recently [17][18][19][20][21][22]. In particular, there is great interest in the effect of magnetic doping, which is considered to be an efficient way to open an energy gap in the Dirac cone by breaking time reversal symmetry (TRS) [23][24][25]. This gap is expected to give rise to many interesting phenomena, such as Majorana fermion [26], topological magnetoelectric effect [27] and quantized anomalous Hall effect [28]. These developments call for a thorough theoretical investigation on WAL in topological insulators, in particular, in the presence of magnetic doping.