Graphical abstractElectric chatacterization of organic field effect transistors with PVT dielectric layer: Pentacene is used as active layer in p-channel device; Fullerene is the active layer in n-channel device. Channel length is 2mm, channel width is 0.06mm. Research highlights► PVT shows low leakage current and high breakdown voltage. ► Both n-channel and p-channel OFET devices give low threshold voltage and are lack of hysteresis. ► Excellent film formation property of PVT allows for fabricating low voltage operation OFET devices. ► All solution processed polymer ambipolar OFET device is realized via layer by layer coating.
a-crystalline phase poly(vinylidene fluoride) (PVDF) film was oriented uniaxially at different draw ratios. Morphological effects of orientation were investigated by X-ray diffraction and differential scanning calorimetry (DSC) measurements on the oriented samples. The dielectric loss factor was measured from 100 Hz to 1 MHz range between 80 and 400 K as a function of frequency and temperature. While the activation energy of the arelaxation transition was not affected by the orientation, it was observed that there is a linear increase in the activation energy of the b-relaxation transition with draw ratio. The relaxation time of the b-relaxation transition was more affected by the orientation process at lower temperatures.
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