Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga+ ion beams <0.3 μm in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.
Focused ion beam (FIB) technology has capabilities for resist exposure, maskless implantation, and other applications for semiconductor devices with submicron dimensions. Focused ion beam systems, the JIBL -100 and 150, are able to obtain a finely focused ion probe with a diameter less than 0.1 micron using a liquid metal ion (LMI) sources. The JIBL -100 system has been developed for fundamental experiments of FIB technology. The JIBL -150 system is a lithography system controlled by a DEC -VAX11 /730 and HP9920 computers.Using these systems, some experiments for sub -half micron lithography have been demonstrated. Both single and double charge Be and Si ion beams are obtainable from an Au -Si -Be LMI source. They can be used for resist exposure with various resist thickness and resist profiles. For example, a T-shaped resist profile was fabricated using 200 keV Be and Si ion beams.
AbstractFocused ion beam (FIB) technology has capabilities for resist exposure, maskless implantation, and other applications for semiconductor devices with submicron dimensions. Focused ion beam systems, the JIBL-100 and 150, are able to obtain a finely focused ion probe with a diameter less than 0.1 micron using a liquid metal ion (LMI) sources. The JIBL-100 system has been developed for fundamental experiments of FIB technology. The JIBL-150 system is a lithography system controlled by a DEC-VAXl 1/730 and HP9920 computers.Using these systems, some experiments for sub-half micron lithography have been demonstrated. Both single and double charge Be and Si ion beams are obtainable from an Au-Si-Be LMI source. They can be used for resist exposure with various resist thickness and resist profiles. For example, a T-shaped resist profile was fabricated using 200 keV Be and Si ion beams.
In order to characterize electron and ion beam induced etching and deposition parameters in a single system a combined focused ion beam (FIB) and electron beam (EB) column has been developed. This system has both an electron gun and a FIB gun with a gallium liquid metal ion (LM!) source integrated on an objective lens and deflector assembly shared by both sources. A cylindrical electrostatic prism was used to position the electron beam on the final lens axis. We have optimized the EB crossover location to minimize chromatic blurring induced by the prism. In addition, the system was configured with a common retarding lens below the objective lens to permit low energy ion and electron beam experimentation. This lens provided the system with an energy range from 1 to 25 keY. The theoretical minimum probe diameters at 1 keY are 20 and 300 nm, respectively, for the electron and focused ion final beam diameters. We wiII present the experimental scanning electron microscopy (SEM) mode and scanning ion microscopy (SIM) mode image results which compare well to the theoretical predictions at 1 keY.
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