We develop a new approach in imaging nonfluorescent species with two-color two-photon and excited state absorption microscopy. If one of two synchronized mode-locked pulse trains at different colors is intensity modulated, the modulation transfers to the other pulse train when nonlinear absorption takes places in the medium. We can easily measure 10(-6) absorption changes caused by either two-photon absorption or excited-state absorption with a RF lock-in amplifier. Sepia melanin is studied in detail as a model system. Spectroscopy studies on the instantaneous two-photon absorption (TPA) and the relatively long-lived excited-state absorption (ESA) of melanin are carried out in solution, and imaging capability is demonstrated in B16 cells. It is found that sepia melanin exhibits two distinct excited states with different lifetimes (one at 3 ps, one lasting hundreds of nanoseconds) when pumped at 775 nm. Its characteristic TPA/ESA enables us to image its distribution in cell samples with high resolution comparable to two-photon fluorescence microscopy (TPFM). This new technique could potentially provide valuable information in diagnosing melanoma.
Optical coherence tomography (OCT) is a noninvasive, three-dimensional imaging modality with several medical and industrial applications. Integrated photonics has the potential to enable mass production of OCT devices to significantly reduce size and cost, which can increase its use in established fields as well as enable new applications. Using silicon nitride (Si3N4) and silicon dioxide (SiO2) waveguides, we fabricated an integrated interferometer for spectrometer-based OCT. The integrated photonic circuit consists of four splitters and a 190 mm long reference arm with a foot-print of only 10 × 33 mm(2). It is used as the core of a spectral domain OCT system consisting of a superluminescent diode centered at 1320 nm with 100 nm bandwidth, a spectrometer with 1024 channels, and an x-y scanner. The sensitivity of the system was measured at 0.25 mm depth to be 65 dB with 0.1 mW on the sample. Using the system, we imaged human skin in vivo. With further optimization in design and fabrication technology, Si3N4/SiO2 waveguides have a potential to serve as a platform for passive photonic integrated circuits for OCT.
Received Month X, XXXX; revised Month X, XXXX; accepted Month X, XXXX; posted Month X, XXXX (Doc. ID XXXXX); published Month X, XXXXWe demonstrate an ultra-compact silicon integrated photonic interferometer for swept-source optical coherence tomography (SS-OCT). The footprint of the integrated interferometer is only 0.75 x 5 mm 2 . The design consists of three 2x2 splitters, a 13 cm physical length (50.4 cm optical length) reference arm and grating couplers. The photonic integrated circuit was used as the interferometer of a SS-OCT system. The sensitivity of the system was measured to be -62 dB with 115 µW power delivered to the sample. Using the system, we demonstrate cross-sectional OCT imaging of a layered tissue phantom. We also discuss potential improvements in passive silicon photonic integrated circuit design and integration with active components.
We show that phase-sensitive detection of spectral hole refilling can yield information about self-phase modulation and two-photon absorption coefficients. We expect that, when applied to tissue microscopy, this technique will allow the study of endogenous molecular markers beneath the surface, even if those markers are nonfluorescent.
Miniaturized laser Doppler vibrometers (LDVs) have many advantages over conventional bulk LDVs. In this paper, the realization of a miniaturized heterodyne LDV integrated on silicon-on-insulator substrate is reported. The optical frequency shifters in these on-chip LDVs employ a serrodyne technique, and they generate a frequency shift at 2 kHz. Vibrations of a mirror for the frequency range between 1.1 and 123 Hz and the velocity range between 0.8 and 400 μm∕s are measured by both an on-chip LDV and a commercial LDV. The measurement results agree well. A compensation method for the influence of on-chip spurious reflections is also demonstrated.
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