The growth rate of a 4H-SiC epitaxial layer has been increased by a factor of 19 (up to 112 lm h -1 ) with respect to the standard process, with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl has been characterized by electrical, optical, and structural characterization methods. The effects of various deposition parameters on the epitaxial growth process have been described, and an explanation of this behavior in terms of the diffusion coefficient on the surface, D s , and the ratio between the characteristic times, s D :s G , has been provided. The diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600°C, have electrical characteristics comparable with the standard epitaxial process. This process is very promising for high-power devices with a breakdown voltage of 10 kV.
The diffusion of aluminium in single-crystal silicon has been studied in the temperature range 1000-1290 "C. A low implantation dose (1 x lo'" Al cm-' ) was used to avoid dopant precipitation and a high energy (6.0 MeV) to reduce the influence, if any, of the suriace. The experimental profiles, measured by spreading resistance, have been fied taking into account the escape of Ai from the Si surface into the ambient atmosphere. A pre-exponential value of 8.88 cm2 8' and an activation energy of 3.44 eV have been found in this experiment. When aluminium is implanted through a capping layer, a reduction of the residual amount has been observed at medium energy (300 keV), while no difference has been measured at high energy (6 MeV).
The formation and dissolution of Si-O-Al precipitates have been investigated in Czochralski silicon wafers implanted with 6 MeV Al ions and thermally processed. The data have been compared to the O precipitation in samples implanted with 6 MeV Si or P ions. The amount of precipitated O atoms is about one order of magnitude higher for Al than for Si or P implanted samples. Moreover, a strong gettering of the Al atoms by the silicon dioxide precipitates has been observed. The precipitate evolution has been studied for different annealing times and temperatures. The oxygen precipitation has been simulated by the classical theory of nucleation and growth, with the introduction of new factors that take into account the implant damage distribution, the agglomeration of point defects during the initial stages of the annealing and the oxygen outdiffusion from the sample surface.
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