As can be seen from SEM images that the diameter of the particles ranged from 95 to 500 nm and the thickness ranged from 1540 to 3640 nm (1.54-3.64 m). The best performance of DSSC was obtained from the sample utilizing the ZnO nanostructures prepared at 0.1 M precursor, with their photovoltaic parameters were the Jsc of 2.190 mA cm -2 , FF of 0.39, and η of 0.41%, respectively.
Ga-doped ZnO nanorods with various Ga concentration have been successfully grown on the surface of the FTO (Fluorine Tin Oxide) substrate using hydrothermal method that was achieved by varying the gallium nitrate hydrate precursor concentration during the growth reaction containing zinc nitrate hexahydrate (ZNH) and hexamethylenetetramine (HMTGallium nitrate hydrate (GNH) concentration used were 2, 3, 5, 6 and 10% of the ZnO precursor solution. The FESEM analysis on the sample indicated that the nanostructures were vertically oriented nanorods. While XRD analysis confirmed that the Ga-ZnO was successfully prepared using the present approach and the Ga content in the GaZnO nanorods can be simply varied by suing different concetration of Ga precursor during the growth process. Current-voltage analysis on the dye sensitized solar cell (DSSCs) containing Ga-doped ZnO nanorods as photoanode with structure of FTO/Ga-doped ZnO/Dye/Electrolyte/Platinum indicated that the performance of the device increased with the increasing of Ga concentration in the ZnO nanorods and optimum if using Ga precursor concentrration of 5%. At this condition the efficiecy was as high as 0.362%. It is nearly three times higher compared to device utilizing pure ZnO nanorods (0.132%). The performance decreased when the Ga concentration further increased in the nanorods. Enhancement of the device performance upon doped with the Ga is associated with the decreasing of carrierrecombination as judged from the dark current analysis results.
Dye Sensitized Solar Cells (DSSC) memiliki struktur seperti sandwich yang terdiri dari elektroda kerja (FTO yang ditumbuhi nanorod ZnO), dye N719, elektrolit dan elektroda lawan (FTO yang dilapisi katalis platisol). Penumbuhan nanorod ZnO ini menggunakan metode hidrotermal dan dilakukan pada suhu 90o C selama 6 jam dengan menambahkan doping aluminium 2%. Pada penelitian ini dikaji pengaruh pen-doping-an pada penumbuhan nanorod ZnO dan efisiensi DSSC dibandingkan dengan tanpa doping. Karakterisasi sampel dilakukan dengan metode FESEM, XRD, Spektroskopi UV-Vis, sedangkan efisiensi DSSC diukur dengan menganalisa karakteristik I-V. Gambar FESEM memperlihatkan bentuk struktur dari sampel ZnO adalah nanorod heksagonal dengan diameter sekitar 63-200 nm. Pola difraksi XRD memperlihatkan puncak difraksi pada sudut 2Ɵ: 34,48o; 36,28o dan 47,6o untuk sampel ZnO tanpa doping dan ketika nanorod ZnO di-doping aluminium 2%, puncak difraksi bergeser 0,04o ke kanan, yaitu pada sudut 2Ɵ: 34,52o; 36,32o dan 47,64o dengan orientasi bidang kristal (002), (101) dan (102). Spektrum reflektansi memperlihatkan reflektansi terjadi pada panjang gelombang 300-360 nm terjadi pemantulan yang kecil. Efisiensi DSSC berbasis nanorod ZnO diuji mengggunakan Gamry EPHE 200 dengan menggunakan sumber cahaya lampu halogen yang dilengkapi filter AM 1,5G yang menghasilkan intensitas yang stabil sebesar 100 mW/cm2. DSSC berbasis nanorod ZnO tanpa doping menghasilkan efisiensi sebesar 0,150%, sedangkan DSSC berbasis nanorod ZnO yang di-doping aluminium 2% menghasilkan efisiensi sebesar 0,479%, sehingga pemberian doping pada nanorod ZnO dapat meningkatkan efisiensi DSSC sebesar 319% dari efisiensi semula.
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