In this paper, we study an electric vehicle routing problem while considering the constraints on battery life and battery swapping stations. We first introduce a comprehensive model consisting of speed, load and distance to measure the energy consumption and carbon emissions of electric vehicles. Second, we propose a mixed integer programming model to minimize the total costs related to electric vehicle energy consumption and travel time. To solve this model efficiently, we develop an adaptive genetic algorithm based on hill climbing optimization and neighborhood search. The crossover and mutation probabilities are designed to adaptively adjust with the change of population fitness. The hill climbing search is used to enhance the local search ability of the algorithm. In order to satisfy the constraints of battery life and battery swapping stations, the neighborhood search strategy is applied to obtain the final optimal feasible solution. Finally, we conduct numerical experiments to test the performance of the algorithm. Computational results illustrate that a routing arrangement that accounts for power consumption and travel time can reduce carbon emissions and total logistics delivery costs. Moreover, we demonstrate the effect of adaptive crossover and mutation probabilities on the optimal solution.
Te-free environmental friendly SiSb phase-change material is investigated for the applications of phase-change memory. The binary material, which is compatible with the complementary metal-oxide semiconductor manufacturing process, is outstanding in various properties comparing with the most widely adopted ternary Ge2Sb2Te5. Si16Sb84 is with an archive life time 106 times longer than that of Ge2Sb2Te5 at 110°C. The density change of Si16Sb84 upon crystallization is only about 3.8%, which is much smaller than that of Ge2Sb2Te5. Furthermore, the interfacial diffusion in TiN∕Si16Sb84 interface is much slighter than that in TiN∕Ge2Sb2Te5.
Te-free non-chalcogenide phase change material Si x Sb 100Àx (0 < x < 100) with eximious data retention has been investigated. Archives life time at 110 C for Si 10 Sb 90 and Si 16 Sb 84 materials are 10 3 and 10 6 times longer than that of Ge 2 Sb 2 Te 5 , which is most widely used in research and development of phase change memory recently. The crystallization temperature for Si 10 Sb 90 and Si 16 Sb 84 are 191 and 225 C, and the crystallization activation energy are 3.1 and 4.67 eV, respectively. These make Si 10 Sb 90 and Si 16 Sb 84 phase change materials promising candidates for the next-generation phase change memory. Furthermore, crystallization temperature and activation energy can be accurately controlled by adjusting silicon atomic content within the Si x Sb 100Àx material.
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