Absorbance modulation is an approach that enables the localization of light to deep sub-wavelength dimensions by the use of photochromic materials. In this article, we demonstrate the application of absorbance modulation on a transparent (quartz) substrate, which enables patterning of isolated lines of width 60 nm for an exposure wavelength of 325 nm. Furthermore, by moving the optical pattern relative to the sample, we demonstrate patterning of closely spaced lines, whose spacing is as small as 119 nm.
Absorbance-Modulation-Optical Lithography (AMOL) enables super-resolution optical lithography by simultaneous illumination of a photochromic film by a bright spot at one wavelength, λ1 and a node at another wavelength, λ2. A deep subwavelength region of the transparent photochromic isomer is created in the vicinity of the node. Light at λ1 penetrates this region and exposes an underlying photoresist layer. In conventional AMOL, a barrier layer is required to protect the photoresist from the photochromic layer. Here, we demonstrate barrier-free AMOL, which considerably simplifies the process. Specifically, we pattern lines as small as 70nm using λ1 = 325nm and λ2 = 647nm. We further elucidate the minimum requirements for AMOL to enable multiple exposures so as to break the diffraction limit.
A comprehensive simulation model of the performance of photochromic films in absorbance-modulationoptical-lithography AIP Advances 6, 035210 (2016); 10.1063/1.4944489Outdoor measurements of a photovoltaic system using diffractive spectrum-splitting and concentration AIP Advances 6, 095311 (2016) Absorbance-Modulation-Optical Lithography (AMOL) has been previously demonstrated to be able to confine light to deep sub-wavelength dimensions and thereby, enable patterning of features beyond the diffraction limit. In AMOL, a thin photochromic layer that converts between two states via light exposure is placed on top of the photoresist layer. The long wavelength photons render the photochromic layer opaque, while the short-wavelength photons render it transparent. By simultaneously illuminating a ring-shaped spot at the long wavelength and a round spot at the short wavelength, the photochromic layer transmits only a highly confined beam at the short wavelength, which then exposes the underlying photoresist. Many photochromic molecules suffer from a giant mismatch in quantum yields for the opposing reactions such that the reaction initiated by the absorption of the short-wavelength photon is orders of magnitude more efficient than that initiated by the absorption of the long-wavelength photon. As a result, large intensities in the ring-shaped spot are required for deep sub-wavelength nanopatterning. In this article, we overcome this problem by using the long-wavelength photons to expose the photoresist, and the short-wavelength photons to confine the "exposing" beam. Thereby, we demonstrate the patterning of features as thin as λ/4.7 (137nm for λ = 647nm) using extremely low intensities (4-30 W/m 2 , which is 34 times lower than that required in conventional AMOL). We further apply a rigorous model to explain our experiments and discuss the scope of the reverse-AMOL process. C 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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