The influence of the droplet composition on the vapor-liquid-solid growth of InAs nanowires on GaAs ( 1 ¯ 1 ¯ 1 ) B by metal-organic vapor phase epitaxyWe report on controlled p-type doping of GaAs nanowires grown by metal-organic vapor-phase epitaxy on ͑111͒B GaAs substrates using the vapor-liquid-solid growth mode. p-type doping of GaAs nanowires was realized by an additional diethyl zinc flow during the growth. Compared to nominally undoped structures, the current increases by more than six orders of magnitude. The transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices proved p-type conductivity. By adjusting the II/III ratio, controlled doping concentrations from 4.6ϫ 10 18 up to 2.3ϫ 10 19 cm −3 could be achieved at a growth temperature of 400°C. The doping concentrations were estimated from electrical conductivity measurements applied to single nanowires with different diameters. This estimation is based on a mobility versus carrier concentration model with surface depletion included.

No abstract

Gallium arsenide (GaAs) nanowires with diameters of 150nm have been grown via metal-organic vapor deposition and were subsequently implanted with Zn64 ions. The amorphized nanowires were annealed at 800°C under arsenic overpressure resulting into a full recrystallization of the nanowires as well as an activation of the implanted acceptors. Consequently, we observe a strong increase in conductivity of the GaAs:Zn nanowires, where a simple estimation of the activated acceptors matches the implantation concentration.

No abstract

No abstract