Nano silicon is emerging as an active element for UV applications due to quantum confinement-induced widening of the Si bandgap, amenability to integration on Si and less sensitivity to temperature. NanoSi-based UV applications include deep space exploration; high temperature propulsion; solar photovoltaics; and particle detection in high energy accelerators. However, the viability of the technology is limited by a complex nanoSi optical quenching instability. Here, we examined the time dynamics of UV-induced luminescence of sub 3-nm nanoSi. The results show that luminescence initially quenches, but it develops a stability at ~ 50% level with a time characteristic of minutes. Upon isolation, partial luminescence recovery/reversibility occurs with time characteristics of hours. To discern the origin of the instability, we perform first principle atomistic calculations of the molecular / electronic structure in 1-nm Si particles as a function of Si structural bond expansion, using time dependent density functional theory (TD-DFT), with structural relaxation applied in both ground and excited states. For certain bond expansion/relaxation, the results show that the low-lying triplet state dips below the singlet ground state, providing a plausible long-lasting optical trap that may account for luminescence quenching as well as bond cleavage and irreversibility. Time dynamics of deviceoperation that accommodates the quenching/recovery time dynamics is suggested as a means to alleviate the instability and allow control of recovery, which promises to make it an effective alternative to UV-enhanced Si or metal-based wide-bandgap sensing technology.
Silicon nanoclusters exhibit light emission with direct-like ns–µs time dynamics; however, they show variable synthesis and structure, optical, and electronic characteristics. The widely adopted model is a core–shell in which the core is an indirect tetrahedral absorbing Si phase, while the shell is a network of re-structured direct-like H–Si–Si–H molecular emitting phases, with the two connected via back Si–Si tetrahedral bonds, exhibiting a potential barrier, which significantly hinders emission. We carried out first-principles atomistic computations of a 1-nm Si nanoparticle to discern the variabilities. Enlarging the network reduces the potential barrier monotonically to a finite limit not sufficient for strong emission to proceed while inducing a path to quenching of emission via a conical crossing between the excited and ground states. However, enlarging the network is found to induce strain and structural instability, which causes structural relaxation that creates a direct path for emission without crossing the barrier. Following emission, the particle relaxes back to the indirect ground structure, which completes the cycle. The results also confirm the pivotal role of HF/H2O2 etching in synthesizing the core–shells and affording control over the molecular network. Measurements using synchrotron and laboratory UV excitation of thin films of 1-nm Si particles show good agreement with the simulation results. It is plausible that the relaxation is behind the stimulated emission, gain, or microscopic laser action, reported earlier in macroscopic distributions of 1- and 3-nm Si nanoparticles.
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