Monitoring of human activities can provide clinically relevant information pertaining to disease diagnostics, preventive medicine, care for patients with chronic diseases, rehabilitation, and prosthetics. The recognition of strains on human skin, induced by subtle movements of muscles in the internal organs, such as the esophagus and trachea, and the motion of joints, was demonstrated using a self-powered patchable strain sensor platform, composed on multifunctional nanocomposites of low-density silver nanowires with a conductive elastomer of poly(3,4-ethylenedioxythiophene):polystyrenesulfonate/polyurethane, with high sensitivity, stretchability, and optical transparency. The ultra-low-power consumption of the sensor, integrated with both a supercapacitor and a triboelectric nanogenerator into a single transparent stretchable platform based on the same nanocomposites, results in a self-powered monitoring system for skin strain. The capability of the sensor to recognize a wide range of strain on skin has the potential for use in new areas of invisible stretchable electronics for human monitoring. A new type of transparent, stretchable, and ultrasensitive strain sensor based on a AgNW/PEDOT:PSS/PU nanocomposite was developed. The concept of a self-powered patchable sensor system integrated with a supercapacitor and a triboelectric nanogenerator that can be used universally as an autonomous invisible sensor system was used to detect the wide range of strain on human skin.

Diverse signals generated from the sensing elements embedded in flexible electronic skins (e-skins) are typically interfered by strain energy generated through processes such as touching, bending, stretching or twisting. Herein, we demonstrate a flexible bimodal sensor that can separate a target signal from the signal by mechanical strain through the integration of a multi-stimuli responsive gate dielectric and semiconductor channel into the single field-effect transistor (FET) platform.

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Ultraviolet (UV) photodetectors based on ZnO nanostructure/graphene (Gr) hybrid-channel field-effect transistors (FETs) are investigated under illumination at various incident photon intensities and wavelengths. The time-dependent behaviors of hybrid-channel FETs reveal a high sensitivity and selectivity toward the near-UV region at the wavelength of 365 nm. The devices can operate at low voltage and show excellent selectivity, high responsivity (RI ), and high photoconductive gain (G). The change in the transfer characteristics of hybrid-channel FETs under UV light illumination allows to detect both photovoltage and photocurrent. The shift of the Dirac point (V Dirac ) observed during UV exposure leads to a clearer explanation of the response mechanism and carrier transport properties of Gr, and this phenomenon permits the calculation of electron concentration per UV power density transferred from ZnO nanorods and ZnO nanoparticles to Gr, which is 9 × 10(10) and 4 × 10(10) per mW, respectively. The maximum values of RI and G infer from the fitted curves of RI and G versus UV intensity are 3 × 10(5) A W(-1) and 10(6) , respectively. Therefore, the hybrid-channel FETs studied herein can be used as UV sensing devices with high performance and low power consumption, opening up new opportunities for future optoelectronic devices.