Asymmetric slits were designed to make channel length (L) of thin film transistor (TFT) narrower. Amorphous silicon TFTs, having various channel lengths in the range of 1.5μm to 4μm, were successfully fabricated by optimizing two different slit widths beyond its own resolution limitation of a exposure system. Also, characteristics of TFTs having channel length below 4μm were investigated in this paper.
Hydrogenated amorphous silicon thin-film transistors (TFTs) with channel length below 4 mm, were successfully fabricated using a new halftone exposure technique combined with conventional photolithography. A concept of asymmetric double-slit design was applied to decrease channel length (L). TFTs having a channel length down to 3 mm was successfully fabricated, and showed better output capability with minor changes in mobility and off-state current. #
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