Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization (writing) speed and amorphous-phase stability (data retention) presents a key challenge. We control the crystallization kinetics of a phase-change material by applying a constant low voltage via prestructural ordering (incubation) effects. A crystallization speed of 500 picoseconds was achieved, as well as high-speed reversible switching using 500-picosecond pulses. Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed. This paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates.

A new methodology for manipulating transient‐amorphous states of phase‐change memory (PCM) materials is reported as a viable means to boost the speed, yet reduce the power consumption of PC memories, and is applicable to new forms of PCM‐based neuromorphic devices. Controlling multiple‐pulse interactions with PC materials may provide an opportunity toward developing a new paradigm for ultra‐fast neuromorphic computing.