The proper choice of nonprecious transition metals as single atom catalysts (SACs) remains unclear for designing highly efficient electrocatalysts for hydrogen evolution reaction (HER). Herein, reported is an activity correlation with catalysts, electronic structure, in order to clarify the origin of reactivity for a series of transition metals supported on nitrogen‐doped graphene as SACs for HER by a combination of density functional theory calculations and electrochemical measurements. Only few of the transition metals (e.g., Co, Cr, Fe, Rh, and V) as SACs show good catalytic activity toward HER as their Gibbs free energies are varied between the range of –0.20 to 0.30 eV but among which Co‐SAC exhibits the highest electrochemical activity at 0.13 eV. Electronic structure studies show that the energy states of active valence dz2 orbitals and their resulting antibonding state determine the catalytic activity for HER. The fact that the antibonding state orbital is neither completely empty nor fully filled in the case of Co‐SAC is the main reason for its ideal hydrogen adsorption energy. Moreover, the electrochemical measurement shows that Co‐SAC exhibits a superior hydrogen evolution activity over Ni‐SAC and W‐SAC, confirming the theoretical calculation. This systematic study gives a fundamental understanding about the design of highly efficient SACs for HER.
Experiments have shown that graphene-supported Ni-single atom catalysts (Ni-SACs) provide a promising strategy for the electrochemical reduction of CO 2 to CO, but the nature of the Ni sites (Ni-N 2 C 2 , Ni-N 3 C 1 , Ni-N 4) in Ni-SACs has not been determined experimentally. Here, we apply the recently developed grand canonical potential kinetics (GCP-K) formulation of quantum mechanics to predict the kinetics as a function of applied potential (U) to determine faradic efficiency, turn over frequency, and Tafel slope for CO and H 2 production for all three sites. We predict an onset potential (at 10 mA cm −2) U onset = −0.84 V (vs. RHE) for Ni-N 2 C 2 site and U onset = −0.92 V for Ni-N 3 C 1 site in agreement with experiments, and U onset = −1.03 V for Ni-N 4. We predict that the highest current is for Ni-N 4 , leading to 700 mA cm −2 at U = −1.12 V. To help determine the actual sites in the experiments, we predict the XPS binding energy shift and CO vibrational frequency for each site.
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have stimulated the modern technology due to their unique and tunable electronic, optical, and chemical properties. Therefore, it is very important to study the control parameters for material preparation to achieve high quality thin films for modern electronics, as the performance of TMDs-based device largely depends on their layer number, grain size, orientation, and morphology. Among the synthesis methods, chemical vapor deposition (CVD) is an excellent technique, vastly used to grow controlled layer of 2D materials in recent years. In this review, we discuss the different growth routes and mechanisms to synthesize high quality large size TMDs using CVD method. We highlight the recent advances in the controlled growth of mono- and few-layer TMDs materials by varying different growth parameters. Finally, different strategies to control the grain size, boundaries, orientation, morphology and their application for various field of are also thoroughly discussed.
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