Organic-inorganic halide perovskites are intrinsically unstable when exposed to moisture and/or light. Additionally, the presence of lead in many perovskites raises toxicity concerns. Herein is reported a thin film of BaZrS3, a lead-free chalcogenide perovskite.Photoluminescence and X-ray diffraction measurements show that BaZrS3 is far more stable than methylammonium lead iodide (MAPbI3) in moist environments. Moisture-and lightinduced degradations in BaZrS3 and MAPbI3 are compared by using simulations and calculations based on density functional theory. The simulations reveal drastically slower degradation in BaZrS3 due to two factorsweak interaction with water, and very low rates of ion migration. BaZrS3 photo-detecting devices with photo-responsivity of ~46.5 mA W -1 are also reported. The devices retain ~60% of their initial photo-response after 4 weeks in ambient conditions. Similar MAPbI3 devices degrade rapidly and show ~95% decrease in photoresponsivity in just 4 days. The findings establish the superior stability of BaZrS3 and strengthen the case for its use in optoelectronics. New possibilities for thermoelectric energy conversion using these materials are also demonstrated.
It is understood that defects of the atomic arrangement of the lattice in 2D molybdenum disulfide (MoS 2 ) grown by chemical vapor deposition (CVD) can have a profound effect on the electronic and optical properties. Beyond these it is a major prerequisite to also understand the fundamental effect of such defects on phonon transport, to guarantee the successful integration of MoS 2 into the solid-state devices. A comprehensive joint experiment-theory investigation to explore the effect of lattice defects on the thermal transport of the suspended MoS 2 monolayer grown by CVD is presented. The measured room temperature thermal conductivity values are 30 ± 3.3 and 35.5 ± 3 W m −1 K −1 for two samples, which are more than two times smaller than that of their exfoliated counterpart. High-resolution transmission electron microscopy shows that these CVD-grown samples are polycrystalline in nature with low angle grain boundaries, which is primarily responsible for their reduced thermal conductivity. Higher degree of polycrystallinity and aging effects also result in smoother temperature dependency of thermal conductivity (κ) at temperatures below 100 K. First-principles lattice dynamics simulations are carried out to understand the role of defects such as isotopes, vacancies, and grain boundaries on the phonon scattering rates of our CVD-grown samples.
We report the use of a single layer of two-dimensional hexagonal boron nitride (SL-hBN) as the thinnest insulating barrier to microbial corrosion induced by the sulfate-reducing bacteria Desulfovibrio alaskensis G20. We used electrochemical methods to assess the corrosion resistance of SL-hBN on copper against the effects of both the planktonic and sessile forms of the sulfate-reducing bacteria. Cyclic voltammetry results show that SL-hBN-Cu is effective in suppressing corrosion effects of the planktonic cells at potentials as high as 0.2 V ( vs Ag/AgCl). The peak anodic current for the SL-hBN coatings is ∼36 times lower than that of bare Cu. Linear polarization resistance tests confirm that the SL-hBN coatings serve as a barrier against corrosive effects of the G20 biofilm when compared to bare Cu. The SL-hBN serves as an impermeable barrier to aggressive metabolites and offers ∼91% corrosion inhibition efficiency, which is comparable to much thicker commercial coatings such as polyaniline. In addition to impermeability, the insulating nature of SL-hBN suppresses galvanic effects and improves its ability to combat microbial corrosion.
Rhenium disulfide (ReS 2 ) differs fundamentally from other group-VI transition metal dichalcogenides (TMDs) due to its low structural symmetry, which results in its optical and electrical anisotropy. Although vertical growth is observed in some TMDs under special growth conditions, vertical growth in ReS 2 is very different in that it is highly spontaneous and substrateindependent. In this study, the mechanism that underpins the thermodynamically favorable vertical growth mode of ReS 2 is uncovered. It is found that the governing mechanism for ReS 2 growth involves two distinct stages. In the first stage, ReS 2 grows parallel to the growth substrate, consistent with conventional TMD growth. However, subsequent vertical growth is nucleated at points on the lattice where Re atoms are "pinched" together. At such sites, an additional Re atom binds with the cluster of pinched Re atoms, leaving an under-coordinated S atom protruding out of the ReS 2 plane. This undercoordinated S is "reactive" and binds to free Re and S atoms, initiating growth in a direction perpendicular to the ReS 2 surface. The utility of such vertical ReS 2 arrays in applications where high surface-to-volume ratio and electric-field enhancement are essential, such as surface enhanced Raman spectroscopy, field emission, and solar-based disinfection of bacteria, is demonstrated.
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