Molybdenum trioxide films have been deposited using thermal atomic layer deposition techniques with bis(tert-butylimido)bis(dimethylamido)molybdenum. Films were deposited at temperatures from 100 to 300 °C using ozone as the oxidant for the process. The Mo precursor was evaluated for thermal stability and volatility using thermogravimetric analysis and static vapor pressure measurements. Film properties were evaluated with ellipsometry, x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and secondary electron microscopy. The growth rate per cycle was determined to extend from 0.3 to 2.4 Å/cycle with <4% nonuniformity (1-sigma) with-in-wafer across a 150 mm wafer for the investigated temperature range.
A number of disilanes have been synthesized from a stable silylene, 1 (N,N'-di-tert-butyl-1,3-diaza-2-silacyclopent-4-en-2-ylidene), and a variety of halocarbons. It is proposed that disilane formation is a result of an initial halophilic interaction between the silylene and halocarbon. Formation of disilanes from 1 and CCl4, 2a, CHCl3, 2b, CH2Cl2, 2c, benzyl chloride, 2d, and bromobenzene, 5, are described here. An X-ray crystal structure of 2b was determined.
The need for the conformal deposition of TiO 2 thin films in device fabrication has motivated a search for thermally robust titania precursors with noncorrosive byproducts. Alkylamido-cyclopentadienyl precursors are attractive because they are readily oxidized, yet stable, and afford environmentally mild byproducts. We have explored the deposition of TiO 2 films on OH-terminated SiO 2 surfaces by in situ Fourier transform infrared spectroscopy using a novel titanium precursor [(EtCp)-Ti(NMe 2 ) 3 (1), Et = CH 2 CH 3 ] with either ozone or water. This precursor initially reacts with surface hydroxyl groups at ≥150 °C through the loss of its NMe 2 groups. However, once the precursor is chemisorbed, its subsequent reactivities toward ozone and water are very different. There is a clear reaction with ozone, characterized by the formation of monodentate formate and/or chelate bidentate carbonate surface species; in contrast, there is no detectable reaction with water. For the ozone-based ALD process, the surface formate/carbonate species react with the NMe 2 groups during the subsequent pulse of 1, forming TiOTi bonds. Ligand exchange is observed within the 250−300 °C ALD window. X-ray photoelectron spectroscopy confirms the deposition of stoichiometric TiO 2 films with no detectable impurities. For the water-based process, ligand exchange is not observed. Once 1 is adsorbed, there is no spectroscopic evidence for further reaction. However, there is still TiO 2 deposition under typical ALD conditions. Co-adsorption experiments with controlled vapor pressures of water and 1 indicate that deposition arises solely from 1/water gas-phase reactions. This striking lack of reactivity between chemisorbed 1 and water is attributed to the electronic and steric effects of the EtCp group and facilitates the observation of gas-phase reactions.
An R2Si: →Ln(II) complex
1, has been synthesized in 90% yield
by reaction of (C5Me5)2Sm with 1,3-di-tert-butyl-2,3-dihydro-1H-1,3,2-diazasilol-2-ylidene in toluene. Structural features of the (C5Me5)2Sm part of 1 are similar to
those in (C5Me5)2Sm(THF). The silylene ligand is located
asymmetrically in the metallocene wedge with one tert-butyl group (Sm−C(Me) = 3.396(4) Å) much closer to
the metal than the other (Sm−C(Me) = 4.741(4) Å). The
Si−Sm(II) distance is 3.1910(1) Å.
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