CZTS thin films were fabricated through sulfurization of sputtered alloy precursors. The properties of CZTS films obtained at sulfurization time of less than 2 hours and at H2S concentrations of higher than 15% were investigated. Sulfurization time of 30 min, 60 min and 90 min and H2S concentrations of 20%, 40% and 60% have been chosen for the sulfurization process. It has been found that Cu poor and slightly Zn rich CZTS films can be obtained at all of those sulfurization time and H2S concentrations. Changing the sulfurization time or H2S concentrations wont change the compositions of sulfurized films. Minor SnS coexist with the dominate CZTS although the films are Zn rich and the distributions of Sn and S along the depth of the films are uniform. The films sulfurized at H2S concentration of 20% have the biggest grain size of exceeding 2 μm and obvious columnar CZTS grains can be observed across the whole cross-section.
The nitrogen-doped TiO2 thin films were prepared by mid-frequency alternative reactive magnetron sputtering technique. The N concentration of the nitrogen-doped TiO2 thin films was analyzed by XPS. And the absorption spectra of the films in ultraviolet and visible region were also investigated. The results show that the mid-frequency alternative reactive magnetron sputtering technique is a convenient method for growing TiO2-xNx. Annealing the nitrogen-doped TiO2 thin film in nitrogen atmosphere under 380°C is helpful for increase the concentration of nitrogen in the film, but the ratio of N2 in reactive gas is mainly influence the concentration of nitrogen in the Ti-N bond in the TiO2 film. The increase of the thickness of nitrogen-doped TiO2 films will enhance the absorbability of the film in the ultraviolet and visible region. The wavelength of the absorption edge of TiO2-xNx film with 1.5% nitrogen shift to 441nm from 387nm, which is the absorption edge for undoped TiO2 films.
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