Recent experiments with metallic nanowires devices seem to indicate that superconductivity can be controlled by the application of electric fields. In such experiments, critical currents are tuned and eventually suppressed by relatively small voltages applied to nearby gate electrodes, at odds with current understanding of electrostatic screening in metals. We investigate the impact of gate voltages on superconductivity in similar metal nanowires. Varying materials and device geometries, we study the physical mechanism behind the quench of superconductivity. We demonstrate that the transition from superconducting to resistive state can be understood in detail by tunneling of high-energy electrons from the gate contact to the nanowire, resulting in quasiparticle generation and, at sufficiently large currents, heating. Onset of critical current suppression occurs below gate currents of 100fA, which are challenging to detect in typical experiments.

Recent experiments have suggested that superconductivity in metallic nanowires can be suppressed by the application of modest gate voltages. The source of this gate action has been debated and either attributed to an electric-field effect or to small leakage currents. Here we show that the suppression of superconductivity in titanium nitride nanowires on silicon substrates does not depend on the presence or absence of an electric field at the nanowire, but requires a current of high-energy electrons. The suppression is most efficient when electrons are injected into the nanowire, but similar results are obtained when electrons are passed between two remote electrodes. This is explained by the decay of high-energy electrons into phonons, which propagate through the substrate and affect superconductivity in the nanowire by generating quasiparticles. By studying the switching probability distribution of the nanowire, we also show that high-energy electron emission leads to a much broader phonon energy distribution compared with the case where superconductivity is suppressed by Joule heating near the nanowire.

We perform supercurrent and tunneling spectroscopy measurements on gate-tunable InAs/Al Josephson junctions (JJs) in an in-plane magnetic field, and report on phase shifts in the current-phase relation measured with respect to an absolute phase reference. The impact of orbital effects is investigated by studying multiple devices with different superconducting lead sizes. At low fields, we observe gate-dependent phase shifts of up to φ 0 = 0.5π which are consistent with a Zeeman field coupling to highlytransmissive Andreev bound states via Rashba spin-orbit interaction. A distinct phase shift emerges at larger fields, concomitant with a switching current minimum and the closing and reopening of the superconducting gap. These signatures of an induced phase transition, which might resemble a topological transition, scale with the superconducting lead size, demonstrating the crucial role of orbital effects. Our results elucidate the interplay of Zeeman, spin-orbit and orbital effects in InAs/Al JJs, giving

Integration of high-quality semiconductor−superconductor devices into scalable and complementary metal-oxidesemiconductor compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor−superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.

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