Dispersion plasmonic interaction at an interface between a doped semiconductor and a dielectric is employed to use experimental data for determining the plasma frequency, the relaxation time, the effective mass, and the mobility of free electrons in heavily donor-doped gallium arsenide (GaAs) and indium phosphide (InP). A new solution for a plasmonic resonance at a semiconductor/dielectric interface found recently is exploited advantageously when analyzing the experimental data. Two independent measurement methods were used, namely the infrared reflectivity and the Raman scattering. Results indicate a good agreement with known data while pointing to some inaccuracies reported, and suggest a new alternative and accurate means to determine these important semiconductor parameters.

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This paper deals with investigation of hard milled surface as a surface undergoing severe plastic deformation at elevated temperatures. This surface exhibits quite remarkable magnetic anisotropy (expressed in term of the Barkhausen noise) and differs from ground surfaces. The main reason can be viewed in specific structure and the corresponding domains configuration formed during rapid cooling following after surface heating. Domains are not randomly but preferentially oriented in the direction of the cutting speed at the expense of feed direction. The Barkhausen noise signals (measured in two perpendicular directions such as cutting speed and feed direction) indicate that the mechanism of the Bloch wall motion during cyclic magnetization in hard milled surfaces differ from surfaces produced by grinding cycles or the raw surface after heat treatment.

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