Tin‐based perovskites are a promising candidates to replace their toxic lead‐based counterparts in optoelectronic applications, such as light‐emitting diodes (LEDs). However, the development of tin perovskite LEDs is slow due to the challenge of obtaining high‐quality tin perovskite films. Here, a vapor‐assisted spin‐coating method is developed to achieve high‐quality tin perovskites and high‐efficiency LEDs. It is revealed that solvent vapor can lead to in situ recrystallization of tin perovskites during the film‐formation process, thus significantly improving the crystalline quality with reduced defects. An antioxidant additive is further introduced to suppress the oxidation of Sn2+ and increase the photoluminescence quantum efficiency up to ≈30%, which is an approximately fourfold enhancement in comparison with that of the control method. As a result, efficient tin perovskite LEDs are achieved with a peak external quantum efficiency of 5.3%, which is among the highest efficiency of lead‐free perovskite LEDs.
Cesium copper halides have the advantages of high photoluminescence quantum efficiency and good stability, making them attractive for replacing toxic lead halides in the field of perovskite light-emitting diodes (LEDs). However, due to their shallow conduction band and the lack of electron transport layers compatible with it, it remains a great challenge to achieve charge balance in LED devices. This drawback manifests as the accumulation of holes at the interface between the emitting layer and electron transport layer, resulting in nonradiative recombination. Here, we demonstrate an effective approach to address this issue by suppressing hole injection, which is realized through modification of the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) layer with polyethylenimine. This leads to cesium−copper−halide LEDs with a high external quantum efficiency of 5.6%, representing an advance in device architecture for efficient electroluminescence from cesium copper halides.
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