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The traditional wireless power transfer circuit uses the full-bridge or half-bridge inverter, which has complex circuit and control and low reliability. To solve these problems, a single-switch LC resonant circuit is proposed, which is simple in structure and can realize zero voltage switching (ZVS) without the problem of shoot-through. The circuit parameters and working process are modeled and analyzed. However, due to the influence of resonance, the common Si devices can not meet the demand because of the high blocking voltage of the switch. For this purpose, the circuit characteristics of SiC-based devices are studied, and the differences of driving and temperature characteristics between SiC MOSFET and Si MOSFET are compared. Finally, a single switch wireless power transfer (WPT) platform based on SiC MOSFET is built, which proves that SiC devices have great advantages in the field of WPT.

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