A synchronous reduction and assembly strategy is designed to fabricate large-area graphene films and patterns with tunable transmittance and conductivity. Through an oxidation-reduction reaction between the metal substrate and graphene oxide, graphene oxide is reduced to chemically converted graphene and is organized into highly ordered films in situ. This work will form the precedent for industrial-scale production of graphene materials for future applications in electronics and optoelectronics.

A controllable and reproducible bipolar memristive protein nanodevice is fabricated by chemical immobilization of ferritin molecules within on‐wire lithography‐generated nanogaps. Control experiments suggest that programmable resistive switching is due to the electrochemical processes in the active centre of ferritin. Such ferritin‐based nanodevices with reversible resistance can be used for nonvolatile memory based on write‐read‐erase cycles.

Single‐walled carbon‐nanotube (SWCNT) arrays are generated on catalyst patterns with controlled location, orientation, and spacing using a straightforward approach. Dip‐pen nanolithography is used to fabricate catalyst patterns with sub‐70 nm resolution, and SWCNTs are successfully grown on these patterns through chemical vapor deposition. The growth direction of the SWCNTs on quartz is controlled, and along the [100] crystallographic direction.

Scratching the surface: A simple needle‐scratching method (NSM) generates large‐area catalyst patterns on solid substrates for the growth of densely aligned single‐walled carbon‐nanotube (SWCNT) arrays by chemical vapor deposition (CVD, see picture). A high density of well‐aligned, ultralong SWCNTs is obtained on single‐crystal quartz. This NSM could allow the fast, cheap, and large‐area fabrication of CNT‐based nanodevices.

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