The indirect bandgap semiconductor tin selenide (SnSe) has been a research hotspot in the thermoelectric fields since a ZT (figure of merit) value of 2.6 at 923 K in SnSe single crystals along the b‐axis is reported. SnSe has also been extensively studied in the photovoltaic (PV) application for its extraordinary advantages including excellent optoelectronic properties, absence of toxicity, cheap raw materials, and relative abundance. Moreover, the thermoelectric and optoelectronic properties of SnSe can be regulated by the structural transformation and appropriate doping. Here, the studies in SnSe research, from its evolution to till now, are reviewed. The growth, characterization, and recent developments in SnSe research are discussed. The most popular growth techniques that have been used to prepare SnSe materials are discussed in detail with their recent progress. Important phenomena in the growth of SnSe as well as the problems remaining for future study are discussed. The applications of SnSe in the PV fields, Li‐ion batteries, and other emerging fields are also discussed.

Aligned carbon nanotube (A‐CNT) films are expected to be an ideal channel material for constructing field‐effect transistors (FETs) that outperform conventional transistors, and multiple methods are developed to fabricate A‐CNT films with high semiconducting purity, good alignment, and high density. However, the reported A‐CNTs‐based FETs are almost all depletion‐mode FETs and suffer from poor subthreshold swing (SS). In this study, enhancement‐mode (E‐mode) FETs based on A‐CNT films are fabricated by systematically optimizing the channel material and CNT/high‐k/metal gate stack. The carrier mobility in top‐gate A‐CNT FETs reaches a maximum value of 1850 cm2 V−1 s−1, which is near that of chemical‐vapor deposition grown individual CNTs and sets a record among A‐CNT films. The fabricated 200 nm‐gate length p‐type A‐CNT FETs present a SS of 73 mV dec−1, the transconductance of 1 mS µm−1, and an on‐current of 1.18 mA µm−1 at a bias of ‐1 V, indicating a real performance exceeding that of commercial Si‐based transistors at a similar gate length. Based on the high‐performance and uniform E‐mode FETs, ring oscillators with stage numbers 5, 7, 9, and 11 are fabricated with an optimized design and high yield, exhibiting a record propagation gate delay of 11.3 ps among CNT‐ and other nanomaterial‐based ICs.

Red swamp crayfish (Procambarus clarkii) breeding is an important economic mainstay in Hubei province, China. However, information on the gut microbiota of the red swamp crayfish is limited. To address this issue, the effect of developmental stage, diet (fermented or non-fermented feed), and geographical location on the gut microbiota composition in the crayfish was studied via high-throughput 16S rRNA gene sequencing. The results revealed that the dominant phyla in the gut of the crayfish were Proteobacteria, Bacteroidetes,Firmicutes, Tenericutes, and RsaHF231. The alpha diversity showed a declining trend during development, and a highly comparable gut microbiota clustering was identified in a development-dependent manner. The results also revealed that development, followed by diet, is a better key driver for crayfish gut microbiota patterns than geographical location. Notably, the relative abundance of Bacteroidetes was significantly higher in the gut of the crayfish fed with fermented feed than those fed with non-fermented feed, suggesting the fermented feed can be important for the functions (e.g., polysaccharide degradation) of the gut microbiota. In summary, our results revealed the factors shaping gut microbiota of the crayfish and the importance of the fermented feed in crayfish breeding.

environment such as full of high energy rays and extreme temperature environment. [2][3][4][5][6][7] For example, radiation harden transistors are necessary for ICs applied in the space and nuclear energy industries. [5][6][7] Recently, cryogenic electronics have received more and more attentions along with the rising of quantum computing and space exploration, in which low-temperature stable operation is even more important than performance of the integrated circuits. [8] Specifically, readout and control circuitry should be monolithic integrated with the quantum processor, which means that they are supposed to operate at low temperature. [9] Therefore, ICs with excellent temperature stability are always demanded to reduce the system noise and ensure accuracy in the control and readout of the qubits. [10] However, it is a big challenge to realize temperature stable ICs since the channel conductance is extremely sensitive to temperature in the semiconductor-based transistors owing to strong temperature dependent carrier scattering and thermal excitation. [11] Carbon nanotube has been considered as a promising channel material to construct high-performance CMOS FETs for the future electronics because of its ultra-thin body, extremely high carrier mobility and symmetric band structure. [12][13][14][15] The development of CNT electronics is strongly dependent on material, and high semiconducting purity and high density aligned CNT arrays with wafer-scale uniformity are the ideal materials for high-performance CNT FETs and ICs. [13,14] However, the most mature CNT material for electronics is solution-derived randomly oriented CNT film which exhibits high semiconducting purity up to 99.9999% and uniformity across large area. [17] Large scale or high-performance ICs have been demonstrated based on randomly oriented CNT film. [18][19][20] However, FETs and ICs built on network CNT film cannot reach the predicted performance due to the random orientation distribution of CNTs, and then are not possible to compete with Si CMOS ICs on performance. [21] An effective way to make network CNT film-based electronics available is to explore the special performances potentially applied in special fields, for example, radiation harden, [22] flexible electronics, [23] cryogenic electronics and so on. Compared with silicon-based FETs, the CNT FETs are more suitable to operate at extreme temperature owing to the Cryogenic electronics are attracting more and more attentions owing to the rising of space exploration and quantum computing, in which lowtemperature stable operation is even more concerned than performance of the integrated circuits (ICs). As a promising semiconducting material, carbon nanotube (CNT) has been extensively explored on its low-temperature transport characteristics, but the cryogenic electronics application of CNT transistors and ICs has seldom been demonstrated. In this work, the lowtemperature operation of field-effect transistors (FETs) and ICs built on solution-derived high semiconducting purity randomly orie...

This study explored the changes in the photosynthetic characteristics of the Fengdan peony under high-temperature stress to provide a reference for understanding the tolerance of peony plants under heat stress. In this study, the effects of high-temperature stress (40 °C) on the photosynthetic characteristics of the Fengdan leaves were studied. At 25 °C, the net photosynthetic rate (Pn), stomatal conductance (Gs), and transpiration rate (Tr) of the leaves decreased gradually with the increase in heat stress time, and intercellular CO2 concentration (Ci) decreased first and then increased. High-temperature stress reduced the light energy absorption (ABS/RC) and capture (TRO/RC), light energy for electron transport (ETO/RC), and heat dissipation (DIO/RC) per unit leaf area. The maximum photochemical efficiency (FV/FM), leaf photochemical performance index (PIabs), the probability that captured excitons can transfer electrons to other electron acceptors in the electron transport chain beyond QA (ψO), and the quantum yield for electron transport (φEo), decreased gradually. The results showed that high temperatures damaged the photosynthetic capacity of the peony leaves and destroyed the photosynthetic apparatus of leaves. This study provides a reference for understanding the photosynthetic characteristics and tolerance of peony plants under heat stress.