Solution-processed amorphous oxide semiconductors are attractive channel materials in thin-film transistors (TFTs) for low-cost electronics. We demonstrate improved performance and uniformity of solution-processed zinc–tin oxide (ZTO) TFTs by optimizing the prebake process for the ZTO precursor film. ZTO prebake process prearranges the dielectric/semiconductor interface and minimizes the performance variation caused by the uneven thermal distribution during annealing process. Prearranging the interface also reduces interfacial trap density and results in improved performance. A mobility of 27.3 cm2/V s, an on/off ratio of ∼107, and a subthreshold swing of 122 mV/decade have been obtained. Significant improvement in operational stability has also been observed.
The characteristics of thin-film transistors (TFTs) with pentacene active layers and source/drain contact layers consisting of either Au, Au coated with highly reduced graphene oxide (HRG), or plain HRG, are compared. It is shown that the incorporation of HRG as an interfacial material between gold source/drain contacts and pentacene in TFT devices results in improved electrical characteristics. The effect of the HRG layer is to improve the gold/pentacene interface leading to better charge injection, lower losses at the interface, and, consequently, higher effective carrier mobility.
We report on charge transport phenomena in high-mobility solution-deposited amorphous zinc-tin oxide based thin-film transistors. At low carrier concentrations, the dominant transport mechanism is multiple trap and release, with the activation energy steadily decreasing with increasing carrier density. The activation energy decreases to zero and beyond a threshold carrier density, the mobility decreases with increasing temperature. This temperature dependence as well as the value of the mobility clearly indicates that transport is bandlike. Also observed is a clear mobility edge in accordance with the prediction of Mott’s model, which are normally observed in crystalline semiconductors.
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