No abstract

New power semiconductor devices, such as SiC MOSFET, have widely fascinated people in recent years. They are playing more and more important roles in modern power electronic converters. Most of current SiC MOSFET models are implemented in simple simulator, such as PSPICE, and have problems in some applications, for example, the accuracy of these models can not satisfy the demand with the increasing of main circuit complexity. A novel model of SiC MOSFET implemented in Matlab/Simulink is proposed in this paper, where its physical mechanism of the device is considered. Firstly the model is established based on its static and transient characteristics. Then the parameters in the model are extracted. And finally simulation and experiment results are compared to validate the model.