No abstract

No abstract

The characteristics of a new anodic dissolution process for sectioning and removing damage from monocrystalline normalGaAs and normalGaSb are described. Dissolution proceeds in the presence of a solid anodic film, which limits local variations in etch rate, so the flatness and microtopography of initially smooth surfaces are preserved. The high anodic efficiency permits accurate monitoring of material removal. Etch rates may be varied from below 0.01 μm hr−1to over 10 μm hr−1 on normalGaAs and to 4 μm hr−1 on normalGaSb . Applications discussed include epitaxial layer thickness trimming and preparation of substrates for epitaxy and samples for crystallographic defect studies.

No abstract

Two new etching procedures for InP are described; one for damage removal with retention of surface flatness, and the other for high resolution defect delineation.