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The efFects of uniaxial stress on the energies of exciton transitions in GaAs/Al"Ga& "Asmultiple quantum wells are investigated both theoretically and experimentally. The valence subbands and the corresponding wave functions are analyzed at the Brillouin-zone center by solving a 4&4 Luttinger-Kohn Hamiltonian in conjunction with a 4X4 strain Hamiltonian in the spin J = 2 basis. Appropriate boundary conditions are obtained by integrating the total Hamiltonian across the interfaces of the wells. Good agreement is obtained between numerical calculations on a 22-nm-wide quantum well subjected to a uniaxial stress in the plane of the well and experimental results obtained using photoluminescence excitation spectroscopy at hquid-helium temperatures. Evidence of valence-subband mixing between the light-hole exciton and higher levels of heavy-hole excitons is clearly observed.

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