In this letter, activation of implanted dopants in 6Hα-SiC using a pulsed excimer laser is reported. Commercially available substrates are implanted with nitrogen or aluminum. A 308 nm pulsed excimer laser is then used to anneal the samples which are held at room temperature. Point contact current-voltage (PCIV) measurements are used to extract the carrier concentration of the annealed layers. Initial results suggest complete activation of the implanted dopants. Pulsed laser annealing of ion implanted SiC appears to be an attractive option as compared to furnace annealing at high temperatures.
An in situ study of electron beam irradiation induced amorphous–to–crystalline transformation of Al2O3 films on silicon substrates has been carried out using transmission electron microscopy. Trigonal α–Al2O3 crystallites can be observed for electron beam dose rates larger than 10 mA/cm2. It is found that the nucleation and growth processes dominate near the Al2O3–Si interface. The possible effect of the silicon substrate on the growth of Al2O3 crystallites is considered.
Silicon carbide is a semiconductor material suitable for a variety of specialized devices. Implantation profiles of 30–300 keV B, Al, N, and As in 6Hα-SiC are reported. The profiles, measured by secondary-ion-mass spectrometry, are fit with Pearson-IV curves which require knowledge of the first four moments of the distribution. The moments of the impurity distributions are extracted from the experimental data and fit to simple functions of the ion energies. Thus, an accurate implantation depth profile simulator, based on experimental data for the common dopants in 6Hα-SiC, is developed. This method results in a more accurate implant simulator than is obtained using conventional first-principles calculations, primarily due to channeling considerations.
An in situ transmission electron microscopy study of the amorphous-to-crystalline transformation of Al2O3 films on a silicon substrate has been carried out. It is found that a critical electron-beam dose rate is required for the transformation to be observed. The possible effect of the silicon substrate on the growth of the Al2O3 crystallites is also discussed.
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