No abstract

The information on the variations of indium composition, aggregation size, and quantum-well width is crucially important for understanding the optical properties and, hence, fabricating efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple quantum wells with indium content in the range of 15%-25% ͑grown with metal-organic chemical-vapor deposition͒. A lower nominal indium content led to a better confinement of indium-rich clusters within InGaN quantum wells. The InGaN/GaN interfaces became more diffusive, and indium-rich aggregates extended into GaN barriers with increasing indium content. It was also observed that indium-rich precipitates with diameter ranging from 5 to 12 nm preferred aggregating near V-shaped defects.

We report the first synthesis of titanium nitride (TiN) nanoparticles inside the nanoscale channels of mesoporous silica SBA-15. The TiN precursor, Ti(NMe 2 ) 4 in toluene, was incorporated into the methyl group-modified channels of the SBA-15 powder. The functionalization of pore surfaces with methyl groups generates hydrophobic surfaces that facilitate impregnation with Ti(NMe 2 ) 4 and minimizes reactions between the TiN precursor and the hydroxyl groups on the surface of SBA-15. Formation of TiN nanoparticles inside the mesoporous channels of SBA-15 was carried out by subsequent ammonolysis at high temperatures (700-750°C). The final products have been characterized by TEM and EELS images, powder XRD patterns, FTIR spectra, UV-vis absorption spectra, and nitrogen adsorption isotherm measurements to confirm the presence and distribution of TiN nanoparticles in the SBA-15 samples.