Retarding field analyzer for ion energy distribution measurements at a radio-frequency biased electrode Rev. Sci. Instrum. 79, 033502 (2008); 10.1063/1.2890100Numerical studies on the transition of tuned substrate self-bias in a radio-frequency inductively coupled plasma Phys. Plasmas 13, 043504 (2006); 10.1063/1.2180687Compact floating ion energy analyzer for measuring energy distributions of ions bombarding radio-frequency biased electrode surfaces Rev.Influence of magnetic field on the selfbias potential on a radio frequencypowered electrode in radio frequency plasma J.
It is demonstrated that microwave cutoff can be used to measure absolute electron densities for CHF3, Ar, and O2 plasmas in a batch-mode planar reactor excited at 13.56 MHz. The densities obtained are between 1015 and 1016 m−3 for all gases and a large set of conditions (pressure, rf power, electrode spacing). A comparison with selective etching of SiO2 over Si in the same reactor shows a qualitative agreement between the substrate ion flux calculated from the electron density and the etch rate of silicon oxide; the apparent sputter yield ranges from 0.4 to 1.4 molecules per ion.
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