A MOS structure device with a ZnO-HfO x layer was fabricated on a p-type silicon substrate. Current (i.e., conductive) paths formed after the breakdown of the dielectric layer under a voltage and thermal-induced emission of broadband light, including visible and near-IR wavelengths. To investigate the influence of the ZnO-HfO x layer on a device's light-emitting characteristics, we prepared devices with one, two and three layers of ZnO-HfO x thin film on a p-type silicon substrate. We then measured the light emission, the emission spectrum, the I-V curves and the microstructure. The results show that the range and peak wavelength of the emission spectra from devices with different numbers of ZnO-HfO x layers are the same. Under the condition of a fixed total thickness of HfO x , luminous intensity increases with increasing number of ZnO-HfO x layers. Multilayer ZnO-HfO x can cause the ZnO grains to diffuse more into the HfO x layer, which is beneficial for the formation of current paths and increases the luminous intensity.
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