In monolayer transition metal dichalcogenides (TMDs), electrons in opposite K valleys are subject to opposite effective Zeeman fields, which are referred to as Ising spin-orbit coupling (SOC) fields. The Ising SOC, originated from in-plane mirror symmetry breaking, pins the electron spins to the out-of-plane directions, and results in the newly discovered Ising superconducting states with strongly enhanced upper critical fields. In this work, we show that the Ising SOC generates equalspin triplet Cooper pairs with spin polarized in the in-plane directions. Importantly, the spin-triplet Cooper pairs can induce superconducting pairings in a half-metal wire placed on top of the TMD and result in a topological superconductor with Majorana end states. Direct ways to detect equal-spin triplet Cooper pairs and the differences between Ising superconductors and Rashba superconductors are discussed.
Recently, Ising superconductors which possess in-plane upper critical fields much larger than the Pauli limit field are under intense experimental study. Many monolayer or few layer transition metal dichalcogenides are shown to be Ising superconductors. In this work, we show that in a wide range of experimentally accessible regimes where the in-plane magnetic field is higher than the Pauli limit field but lower than Hc2, a 2H-structure monolayer NbSe2 or simiarly TaS2 becomes a nodal topological superconductor. The bulk nodal points appear on the Γ − M lines of the Brillouin zone where the Ising SOC vanishes. The nodal points are connected by Majorana flat bands, similar to the Weyl points being connected by surface Fermi arcs in Weyl semimetals. The Majorana flat bands are associated with a large number of zero energy Majorana fermion edge modes which induce spin-triplet Cooper pairs. This work demonstrates an experimentally feasible way to realise Majorana fermions in nodal topological superconductor, without any fining tuning of experimental parameters.
Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons from different valleys. Such valley Hall effects have been achieved only by extrinsic means, such as substrate coupling, dual gating, and light illuminating. Here we report the first observation of intrinsic valley Hall transport without any extrinsic symmetry breaking in the non-centrosymmetric monolayer and trilayer MoS2, evidenced by considerable nonlocal resistance that scales cubically with local resistance. Such a hallmark survives even at room temperature with a valley diffusion length at micron scale. By contrast, no valley Hall signal is observed in the centrosymmetric bilayer MoS2. Our work elucidates the topological origin of valley Hall effects and marks a significant step towards the purely electrical control of valley degree of freedom in topological valleytronics.
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