The electronic structure of a series perovskites ABX3 (A = Cs; B = Ca, Sr, and Ba; X = F, Cl, Br, and I) in the presence and absence of antisite defect XB were systematically investigated based on density-functional-theory calculations. Both cubic and orthorhombic perovskites were considered. It was observed that for certain perovskite compositions and crystal structure, presence of antisite point defect leads to the formation of electronic defect state(s) within the band gap. We showed that both the type of electronic defect states and their individual energy level location within the bandgap can be predicted based on easily available intrinsic properties of the constituent elements, such as the bond-dissociation energy of the B–X and X–X bond, the X–X covalent bond length, and the atomic size of halide (X) as well as structural characteristic such as B–X–B bond angle. Overall, this work provides a science-based generic principle to design the electronic states within the band structure in Cs-based perovskites in presence of point defects such as antisite defect.

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Severe plastic deformation of 304L stainless steel plate was carried out by friction stirring under an isothermal tool temperature at 825°C. The friction stirred zone showed extensive grain refinement, high fraction of low angle grain boundaries due to dislocation rearrangement, Σ3 and Σ9 special grain boundaries and discrete Fe-Cr-Mn-rich particles. Electrochemical polarisation measurements were done on the base metal (BM) and friction stir welded (FSW) specimens in the neutral and acidified 3.5% NaCl solutions. The BM showed marginally better pitting resistance in the neutral chloride solution than the FSW because of a larger fraction of special grain boundaries, and larger grain size. Whereas in acidified 3.5% NaCl solution, the FSW showed better corrosion resistance than the BM. The surface film of the FSW had a lower impedance and a lower defect concentration than the BM indicating higher diffusivity of point defects in the FSW.