The semiconductor pixel detector Timepix2 is operated with highly integrated readout electronics as a miniaturized and portable MiniPIX TPX2 radiation camera for radiation imaging and spectral-sensitive particle tracking in wide field-of-view. The device provides room-temperature operation, ease of use (single USB 2.0 port), online response with single track visualization, fast frame readout (up to 60 fps) and double per-pixel response for detailed measurements with per-pixel energy and counting or energy and timing sensitivity. We evaluate the response and applicability of a MiniPIX TPX2 camera with the Timepix2 ASIC chip equipped with a 300 µm thick silicon sensor for wide-range composition and spectral characterization of mixed-radiation fields. Measurements were performed in high-energy proton radiotherapy environments with protons of selected energies in the range 225–70 MeV and water-equivalent targets of varying configuration (size, dimension, geometry). High-resolution pattern recognition and spectral-tracking analysis of the single particle tracks in the pixelated detector enable to resolve and classify all detected signals according particle species, direction and energy loss. Based on the experimental calibrations performed with well-defined radiation fields together with quantum imaging visualization of single particle tracks, ten broad-range particle-event classes are resolved. Mixed-radiation fields are thus analyzed according particle-event types in wide range of deposited energy, linear-energy-transfer LET, particle fluxes and dose rates. The spatial distribution over the detector sensor matrix of the distinguished groups can be visualized as well as the directional mapping of energetic charged particles.
In this work, Schottky detectors based on a high-quality 4H-SiC epitaxial layer with a thickness of 50 µm were prepared. The Schottky contact of Ni/Au metallization with a 3 mm diameter was made. Reverse current-voltage characteristics were measured up to a voltage of 300 V with a leakage current of 40 pA at room temperature. Using an α-particle radiation source, the spectrometric characteristics of the 4H-SiC detector were tested. The best energy resolution in the FWHM (Full Width and Half Maximum) about 15 keV for 5.5 MeV α-particles was observed. Furthermore, a 4H-SiC pixel sensor (256 × 256) for the Timepix3 reading chip was prepared. The spectrometric and imaging properties of the new Timepix3 detector based on the 4H-SiC sensor were tested. The results showed high energy resolution and also high-quality X-ray imaging of the biological object.
Position and directional-sensitive spectrometry of energetic charged particles can be performed with high resolution and wide dynamic range (energy, direction) with the hybrid semiconductor pixel detectors Timepix/Timepix3. The choice of semiconductor sensor material, thickness, and properties such as the reverse bias voltage, greatly determine detector sensitivity and resolving power for spectrometry and particle tracking. We investigated and evaluated the spectral tracking resolving power such as deposited energy and linear-energy-transfer (LET) spectra with the Timepix3 detector with different semiconductor sensors, based on GaAs:Cr, CdTe, and Si, using well-defined radiation sources in terms of radiation type (protons), energy, and incident direction to the detector sensor. Measurements of particle incident direction in a wide range were performed with collimated monoenergetic proton beams of various energies in the range 8–31 MeV at the U120-M cyclotron at the NPI CAS Rez near Prague. All detectors were per-pixel calibrated. This work enables to examine and perform a detailed study of charge sharing and charge collection efficiency in semiconductor sensors. The results serve to optimise the detector chip-sensor assembly configuration for measurements especially with high-LET particles in ion radiotherapy and outer space. The work underway includes evaluation of newly refined semi-insulating GaAs sensors and improved radiation hard semiconductor sensors SiC.
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