The practical applicability of ultrathin films, which offer interesting and novel functionalities, is often limited by difficulties in achieving large area deposition while maintaining homogenous layer properties. Herein, a new deposition method allowing ultrathin, conductive gallium‐containing layers to be prepared at ambient conditions on wafer‐scaled areas is presented. Multilayers are formed by repetition of the deposition procedure. High‐resolution structural analysis using X‐ray reflectometry shows that the multilayer thickness is proportional to the number of deposition cycles, yielding a highly reproducible single layer thickness of 2.9 ± 0.2 nm. Furthermore, it is shown that single layers consist of a complex heterostructure composed of a nanometer‐thin metallic Ga core, which is surrounded by stabilizing gallium (hydr)oxide skin layers. The macroscopic electric conductivity of these multilayers increases with increasing number of deposited layers, approaching the value of bulk gallium after six deposition cycles, thereby showing that functional properties such as the multilayer's electrical conductivity can be fine‐tuned based on the chosen number of deposition cycles.

Atmospheric pressure plasma (APP) deposition techniques are useful today because of their simplicity and their time and cost savings, particularly for growth of oxide films. Among the oxide materials, titanium dioxide (TiO2) has a wide range of applications in electronics, solar cells, and photocatalysis, which has made it an extremely popular research topic for decades. Here, we provide an overview of non-thermal APP deposition techniques for TiO2 thin film, some historical background, and some very recent findings and developments. First, we define non-thermal plasma, and then we describe the advantages of APP deposition. In addition, we explain the importance of TiO2 and then describe briefly the three deposition techniques used to date. We also compare the structural, electronic, and optical properties of TiO2 films deposited by different APP methods. Lastly, we examine the status of current research related to the effects of such deposition parameters as plasma power, feed gas, bias voltage, gas flow rate, and substrate temperature on the deposition rate, crystal phase, and other film properties. The examples given cover the most common APP deposition techniques for TiO2 growth to understand their advantages for specific applications. In addition, we discuss the important challenges that APP deposition is facing in this rapidly growing field.

Low-temperature plasmas have quickly emerged as alternative and unconventional types of radiation that offer great promise for various clinical modalities. As with other types of radiation, the therapeutic efficacy and safety of low-temperature plasmas are ubiquitous concerns, and assessing their dose rates is crucial in clinical settings. Unfortunately, assessing the dose rates by standard dosimetric techniques has been challenging. To overcome this difficulty, we proposed a dose-rate assessment framework that combined the predictive modeling of plasma-induced damage in DNA by machine learning with existing radiation dose-DNA damage correlations. Our results indicated that low-temperature plasmas have a remarkably high dose rate that can be tuned by various process parameters. This attribute is beneficial for inducing radiobiological effects in a more controllable manner.

No abstract