It has been observed that {311} defects form, grow, and eventually dissolve during annealing of Si-implanted silicon wafers. The fact that for subamorphizing silicon implants {311} defects initially contain the full net dose of excess interstitials, and that the time scale for dissolution of these defects is about the same as the time scale of transient enhanced diffusion (TED) leads to the conclusion that {311} defects are a primary source of interstitials under TED conditions. We describe a comprehensive model which accounts for the evolution of these defects during ion implant annealing, and in combination with point defect parameters from previous work also correctly predicts TED behavior.
This paper targets to show feasibility of a three-dimensional process simulation flow in the context of optimization of the device design and the underlying fabrication processes. The simulation is based on and refers to the development of the SOI-based 30 nm FinFET devices. The major goal of the simulation work is to implement a complete FinFET process flow into a commercially available 3D process simulation environment. Furthermore, all important three-dimensional geometrical features, such as corner roundings and 3D facets, have been introduced into the simulation set-up. After the successful demonstration of a functional 3D process simulation flow, detailed issues of process simulation methodology are assessed, such as the usage of different dopant diffusion models or the modelling of specific oxidation processes plus assessment of different annealing conditions. Finally, a comparison of the simulation results with electrical measurement data is performed which shows fairly good agreement.
Accurate modeling of extended defect kinetics is of primary importance for prediction of transient enhanced diffusion ͑TED͒ following ion implantation of silicon. Our previously developed moment-based model ͓Gencer and Dunham, J. Appl. Phys. 81, 631 ͑1997͔͒ accurately accounts for formation and evolution of ͕311͖ defects and can be used to predict TED under subamorphizing conditions. Using experimental knowledge about the distribution of the ͕311͖ defect population, and making approximations on the sums that are encountered in the model, we are able to simplify this model. We demonstrate that these simplifications don't affect the predictive capabilities of the model for ͕311͖ defect kinetics and TED. Furthermore, we are able to extend the model, under the same simplifying assumptions, to account for dislocation loop formation from ͕311͖ defect unfaulting and dislocation loop evolution, giving a unified model for interstitial aggregation in silicon. The resulting analytical model does not impose any computational speed penalty when the loop extension is turned on, making it applicable to a wide range of problems.
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